在本論文中，我們使用有機金屬化學汽相磊加法(MOCVD)成長氮化鎵系列發光二極體並探討其光電特性。
　　在實驗中，我們以MEDICI作半導體特性模擬，並將之與實驗數據作分析驗證。另外我們調變了量子井中能障(barrier)與井(well)的厚度、多重量子井的數目及能障中不同摻雜位置與濃度，發現在我們的結構中，由於電子電洞不同的遷移率造成能障厚度在215Å時為最佳值。而愈窄的量子井將有較好的量子侷限效果，且其主導了發光二極體的發光光譜。再者，不同的能障摻雜位置也會影響發光二極體的VF2,而若增加摻雜的濃度，由於摻雜的載子可以填補晶體中的缺陷，所以可以加強晶體的晶質。
　　最後，分別討論氧化銦錫導電層的厚度及回火溫度，發現在此種沈積情形下，以450°C、1800Å厚時為最佳條件。
　　本論文中，我們詳細的研究了量子井特性對發光二極體的影響，並且成功的驗證模擬的結果，在研製發光二極體上將有更好的結果。

In this thesis, the properties and characteristics investigation of nitride based multiple quantum wells light emitting diodes which had been fabricated by metal organic chemical vapor deposition were demonstrated.
The simulation results using “MEDICI” of different barrier doping location and concentration were compared with experimental results. Furthermore, the parameters of quantum well such as barrier and well thickness and barrier doping condition were confirmed using x-ray diffraction, photoluminescence and electroluminescence. From the experiments, different doping location changes the forward voltage at 20mA (i.e. VF2) of LEDs. Then, barrier thickness of 215Å is determined with the best quantity in this structure due to better electron-hole recombination mechanism. Besides, the narrower well thickness shows better quantum confinement then contributes to LED luminescence. The well thickness is dominant in energy transition; hence different well thickness changes emitted light of LED. In addition, higher barrier doping concentration can lead to better crystal quality owing to the doped silicon make up for the defects.
Further, the highest transparency of ITO film was obtained with 450°C annealing temperature and 1800 Å thickness separately.
In summary, the studies of quantum well doping, thickness and pair were demonstrated to verify their characteristics, and simulations also show a considerable tool to design and determine to characteristic of optical devices.

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