| 研究生: |
蘇俊霖 Su, Chun-Lin |
|---|---|
| 論文名稱: |
氧化鎳與氧化鈷溶液旋塗於n型氮化鎵之光電化學水分解特性分析 The study of photoelectrochemical water splitting using n-GaN with sol-gel coated NiOX & CoOX thin film as working electrode |
| 指導教授: |
許進恭
Sheu, Jinn-Kong |
| 學位類別: |
碩士 Master |
| 系所名稱: |
理學院 - 光電科學與工程學系 Department of Photonics |
| 論文出版年: | 2019 |
| 畢業學年度: | 107 |
| 語文別: | 中文 |
| 論文頁數: | 119 |
| 中文關鍵詞: | 氮化鎵 、光電化學 、氧化鈷 、氧化鎳 、抗腐蝕 |
| 外文關鍵詞: | gallium nitride, nickel oxide, cobalt oxide, photoelectrochemical |
| 相關次數: | 點閱:113 下載:2 |
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本實驗是利用三五族氮化鎵半導體,應用於光電化學水分解系統中當作工作電極,因為氮化鎵具有寬能隙足夠跨越氧化還原電位。但經過長時間的光電化學量測後會使氮化鎵表面產生嚴重的腐蝕現象,所以本次論文將會探討有效利用氧化物的催化作用,使載子能夠更容易傳輸至電解液,改善氮化鎵與電解液直接接觸造成腐蝕現象。
所以本次實驗使用鎳與鈷粉末作為前驅物配置氧化鎳與氧化鈷溶液旋塗於氮化鎵基板上,於光電化學量測中作為工作電極,量測長時間光電流及分析材料特性。
最後,由實驗結果得到,氧化鎳在本次實驗具有催化作用,可以增加載子傳輸,且由表面分析可觀察出,氮化鎵有覆蓋一層氧化鎳後確實有達到抗腐蝕效果,且光電流有提升。但氧化鈷實驗中,催化效果較不顯著,推測因為氧化物材料本身旋塗的厚度,所以影響載子傳輸,使光電流偏低。
In this experiment, we used nickel oxide (NiOX) and cobalt oxide (CoOX) to cover n-type gallium nitride (n-GaN) to reduce surface corrosion of gallium nitride (GaN) semiconductors and electrolytes during long-term measurements. Nickel (Ni) and cobalt (Co) powders were used as precursors in the experiments. The precursor is synthesized synthetically. Finally, the spin coating method was uniformly applied to the surface of gallium nitride (GaN), and the surface oxide characteristics were analyzed by using different annealing temperatures. It is observed by the photoelectrochemical system that nickel oxide (NiOX) has a catalytic action, so that holes can be introduced into the electrolyte more quickly, and gallium nitride covering nickel oxide (NiOX) is used for a long period of time with less corrosion. The photocurrent of cobalt oxide (CoOX) is lower than that of gallium nitride (GaN). It is speculated that the thickness of the cobalt oxide film is too thick, thereby hindering carrier transport and low photocurrent.
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