氮氧化矽與氮化矽薄膜具有特殊的導通能力(半導體或壓電性質)，擁有高介電常數及其有不易被氧化及水氣滲透的特性，氮氧化矽薄膜更具有薄膜內氮氧元素含量比例的可調性，使得此兩種薄膜常被用來作為半導體元件的絕緣層、介電層、蝕刻罩幕以及微系統裝置的結構材料等。然而當使用氮氧化矽和氮化矽薄膜應用在半導體製程或微系統裝置上時，薄膜的機械性質和光學性質會影響到半導體製程的良率或微系統裝置的致動範圍與可靠度，由此可得知薄膜材料性質的掌握扮演著重要的角色。本文將針對磁控濺鍍氮氧化矽與電漿輔助化學氣相沈積氮化矽薄膜的材料性質做一系列的檢測，主要是以壓痕技術為主軸對測試材料做檢測，檢測結果可分為兩個部分，首先是磁控濺鍍氮氧化矽薄膜材料性質的部分，探討在不同氮氧元素含量比例以及不同的熱處理溫度下，氮氧化矽薄膜的彈性模數、硬度、殘留應力、破壞特性、折射率以及吸收光譜波長等性質的變化趨勢；另一部份則是磁控濺鍍和電漿輔助化學氣相沈積系統所沈積的氮化矽薄膜，彈性模數、硬度、殘留應力與破壞韌性在各個熱處理溫度影響下，材料機械性質變化的趨勢並比較兩沈積製程的薄膜材料機械性質有何不同。最後以彈性力學與破壞力學分析以及使用微結構的觀點對檢測結果作討論，探討材料性質的變化趨勢。本文的研究結果相信能提供設計者在設計元件結構的設計依據，同時也利於半導體製程參數最佳化、改善微系統製程的良率以及IC封裝的可靠度。

Silicon oxynitride (SiON) and silicon nitride (Si3N4) films are widely used in semiconductor and microelectromechanical systems (MEMS) applications. SiON films have been reported as a promising material for applications in photonics because of its tunability in optical, electronic and mechanical properties by changing the chemical composition of oxygen and nitrogen. On the other hand, Si3N4 films are typically structural materials for IC passivation layers, device dielectrics, and MEMS structures. Among these applications, material properties, which have seldom been reported yet, play important roles for determining the performance and device longevity. In this thesis, the mechanical behaviors of SiON and Si3N4 films which subjected to rapid thermal annealing process were chaeacterized. The mechanical properties of these films, such as elastic modulus, hardness, residual stress, and fracture toughness, were characterized by nanoindentation and Vickers microindentation techniques. Moreover, the optical properties including refractive index and absorbance infrared spectrum were also characterized by using ellipsometer and FT-IR. For SiON films study, the experimental results indicated that the mechanical and optical properties are strongly influenced by thermal annealing temperature and/or changing the oxygen and nitrogen content. On the other hand, by characterizing nitride films from different deposition processes, it could be found that the elastic modulus, hardness and residual stress properties of magnetron sputtered Si3N4 films have better performances than PECVD Si3N4 films. However, the fracture toughness of PECVD Si3N4 films is much better than magnetron sputtered Si3N4 films. In addition, we discussed the variation tendency of material properties corresponding with microstructural viewpoints and mechanics. The result of the SiON and Si3N4 films characterization can benefit to MEMS community in maintaining structural integrity, structure design, and reliability assessment.

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