本研究為改善錫鋅系銲錫合金之缺點，故添加少量的Al、Ag與Ga金屬元素進行改質，並利用潤濕天平量測錫鋅系銲錫與銅、銀基材之潤濕行為，以評估添加金屬元素的改質效應。另一方面，錫鋅系銲錫與銀基材之界面反應鮮少被研究討論，本研究針對錫鋅系銲錫與銀基材的固-液與固-固反應，及其界面介金屬化合物的成份鑑定與成長型態加以分析討論，並描述其生長行為與機制。
Sn-Zn-0.5Ag-0.1Al-0.5Ga銲錫合金之顯微組織為針狀富鋅相與AgZn3介金屬化合物散佈於錫基地中，而此銲錫合金與銅、銀基材之潤濕行為，相較於其他銲錫（Sn、Sn-9Zn、Sn-Zn-0.5Al、Sn-Zn-XGa和Sn-8Zn-3Bi），呈現出最佳的潤濕性質（最短的潤濕時間與最強的最大潤濕力）。
固-液反應結果顯示，銀基材與Sn-9Zn、Sn-Zn-0.5Al、Sn-Zn-0.5Ga和Sn-8Zn-3Bi等錫鋅系銲錫於250℃反應時，於界面形成雙層生成物的型態，由X光繞射分析與元素線掃描結果可知，靠近銀基材處為ζ-AgZn，而靠近銲錫處為γ-Ag5Zn8，且並無發現含有Sn之介金屬化合物。而Sn-Zn-0.5Ag-0.1Al-0.5Ga銲錫合金與不同基材於250℃之固-液反應，分別形成γ-Cu5Zn8（銅基材）與ζ-AgZn、γ-Ag5Zn8（銀基材），且熔融銲錫中的Ag與Zn元素會在冷卻過程中，於界面處形成ε-AgZn3。
關於Sn-Zn-0.5Ag-0.1Al-0.5Ga銲錫合金與銅、銀基材之固-液反應，為求得介金屬化合物之生長動力數據，本研究改變反應溫度與時間，以量測其生成物厚度之變化。結果顯示Ag-Zn介金屬化合物於Sn-Zn-0.5Ag-0.1Al-0.5Ga銲錫與銀基材之界面生長為擴散控制（n = 0.5），且成長之反應活化能為126.3 KJ/mol。另一方面，此銲錫與銅基材之固-液反應結果顯示，γ-Cu5Zn8於界面生長為反應控制（n = 1），而成長之反應活化能為24.3 KJ/mol。
經150℃時效處理後，銀基材與錫鋅系銲錫（Sn-9Zn、Sn-Zn-0.5Al與Sn-Zn-0.5Ag-0.1Al-0.5Ga）之固-固反應界面型態大致相同；扇貝層狀的型態轉變成平坦層狀。且隨著時效時間的增加，ε-Ag3Sn開始形成於Ag5Zn8與銲錫之間，並逐漸往銀基材延伸成長，造成Ag3Sn與Ag-Zn層混合交錯的型態。

The drawbacks of Sn-Zn based solders could be improved by alloying modification. This study investigated the effect of various alloying elements, Al, Ag and Ga, on the wetting behavior between the Sn-Zn based solders and Cu/Ag substrates. On the other hand, the interfacial reaction between the Sn-Zn based solders and Ag substrate were rarely studied before. The solid-liquid and solid-solid reactions of Sn-Zn based solders were also investigated, and the intermetallic compounds (IMCs) formed at interface were identified and the growth behaviors were discussed.
The microstructure of Sn-Zn-0.5Ag-0.1Al-0.5Ga solder consists of needle Zn-rich phase and AgZn3 distributed in the Sn matrix. This solder performed the best wetting properties (shortest wetting time and largest wetting force) as compared to other solders (Sn, Sn-9Zn, Sn-Zn-0.5Al, Sn-Zn-XGa and Sn-8Zn-3Bi).
The solid-liquid reaction at 250℃ gives rise to a Ag-Zn two-layer structure between Ag substrate and Sn-9Zn, Sn-Zn-0.5Al, Sn-Zn-0.5Ga and Sn-8Zn-3Bi. XRD and elemental line-scan results revealed, one layer to be γ-Ag5Zn8 which exists close to the solder and the other layer as ζ-AgZn next to the Ag substrate. The IMC content of Sn was not observed at all. At the interface between Sn-Zn-0.5Ag-0.1Al-0.5Ga solder and Cu, Ag substrate, the γ-Cu5Zn8, ζ-AgZn and γ-Ag5Zn8 were formed respectively during the solid-liquid reaction at 250℃. During the solidification, the ε-AgZn3 was formed at interface due to the reaction between Ag and Zn of the solder.
The kinetic values of IMC growth could be calculated by measuring the thickness of IMCs after solid-liquid reaction at different temperature for different time. The results of calculation revealed that the growth of Ag-Zn IMC formed at the interface between Sn-Zn-0.5Ag-0.1Al-0.5Ga solder and Ag was diffusion controlled (n = 0.5), and the activation energy of growth was 126.3 KJ/mol. On the other hand, the growth of Cu5Zn8 formed at Cu substrate was reaction controlled (n = 1), and the activation energy was 24.3 KJ/mol.
After 150℃ aging treatment, the interfacial morphologies between Ag substrate and Sn-Zn based solders (Sn-9Zn, Sn-Zn-0.5Al and Sn-Zn-0.5Ag-0.1Al-0.5Ga) were similar. The reaction layers were transformed from scallop-like to continuous. With increasing aging time, the growth of Ag3Sn increases and it moves forward and very close to the substrate. The mixture structures of Ag3Sn and Ag-Zn layer were eventually formed at the interface.

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