長鏈烷基硫醇自組裝單分子層(Alkanethiol self-assembled monolayers, AT-SAMs)對於特定化學蝕刻液具特定抵抗性；同時，其與物理源(X-ray、離子束、電子束)具有誘導發生反應的作用而形成負/正型阻劑(resist)。因此，本研究企圖使用低能量(E＜1 keV)電子束微影術(Low energy electron beam lithography, LE-EBL)作為微影技術，並於微影後使用濕式蝕刻方式進行顯影來進行圖案的製作。首先，在矽晶圓上使用電子束蒸鍍5 nm Ti層，隨後在其上蒸鍍50 nm Au膜得到以Au(111)面為主的表面，同時將蒸鍍好的Au膜及對排列於Au膜面上之正十八硫醇(Octadecanethiol, ODT)試片進行濕式蝕刻分別得到兩種試片Au之蝕刻終止點，以確認ODT排列於Au膜上後對Au蝕刻液的抗蝕效果。接著，以靜態水滴接觸角分析50eV低能量電子束照射不同劑量並曝露於大氣後ODT/Au試片表面親疏水性的改變，以決定微影照射劑量；再將ODT/Au試片經所選擇的劑量照射並曝露於大氣後進行表面元素分析，最後以Au蝕刻液進行顯影。結果發現：以50 eV 低能量電子在照射劑量7.04 mC/cm2微影並曝露於大氣後，受到來自於ODT/Au碳鏈間的交聯、部分的S-Au鍵結破壞以及照射後立即曝露大氣所吸附於表面的碳氧化物種的共同影響下，ODT SAMa於Au膜基材上將形成更緊密複雜的結構而作為負型阻劑，經後續濕式蝕刻15分鐘後將顯影出來Au的負型圖案；當提升照射劑量至64.06及128.13 mC/cm2後，由於ODT/Au上碳鏈及S-Au鍵結的大量破壞，將使ODT/Au結構不能穩固且緊密地排列於Au膜基材上，顯影時Au蝕刻液將容易穿過ODT SAMs抵達S/Au界面而移除Au，而形成正型圖案。由此，ODT/Au可在控制不同LE-EBL照射劑量並曝露大氣後將可分別作為負型阻劑及正型阻劑，於Au蝕刻液中顯影出Au的負型圖案與正型圖案。

Alkanethiol self-assembled monolayers (AT-SAMs) have good resistance for specific wet-etching solutions and behave as negative/positive resists after irradiated by physical sources such as X-ray, ion beams, and electron beam. The aim of this study is to fabricate gold pattern via the low energy (E＜1 keV) electron beam lithography (LE-EBL) followed by exposing to air, then developing with gold-etching solutions for octadecanethiol (ODT) on the substrate. The substrate is prepared by first electron-beam evaporating a thickness of 5 nm titanium on the silicon wafer, and followed evaporating 50 nm thickness of gold on the titanium layer. Subsequently, immersing of the gold substrate and ODT/Au samples into the gold-etching solution in order to find out the end time point of gold layer of which, leading to understanding of the resistivity of ODT/Au in the etching solution. Also, the process doses of LE-EBL are determined from the dose-static contact angle relation, followed by HRXPS analysis. Finally, the gold patterns are obtained by gold-etching solution development. Concluded from the analyses of negative-positive resist transformation, the experimental procedure of ODT/Au was first irradiated by 50eV LE-EBL with three specific doses, after that proceeded to exposed to air. With the dose of 7.04 mC/cm2, ODT/Au will become a more strengthened structure and then form a negative resist in the correlation with cross-linking from alkyl matrix, partial breakdown of S-Au bonding and surface adsorption by air-borne species. Thus, it can obtain a gold pattern via gold-etching process. Besides, as a result of massive breakdown of alkyl matrix and S-Au bonding from ODT/Au under irradiation with doses of 64.06 and 128.13 mC/cm2, ODT SAMs would form a loose-packed structure on the gold substrate. The ODT/Au becomes less resistive for gold-etching and a positive gold pattern would form after gold-etching. By controlling LE-EBL doses and being exposed to air at the following step, ODT/Au could behave either as negative or positive resists. Finally, it will perform the negative and positive gold patterns after gold-etching process.

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