此文主要是探討長波長InP系列之光電開關的研製與分析。在結構中，將由InGaAs/InGaAsP所形成的多重量子井結構合併在p-n-p-n元件裡，以製成長波長光光電開關。首先以不同結構之元件，來比較開關元件之電流-電壓特性，以明瞭摻雜濃度對電流電壓特性曲線的影響，並且製作兩端元件，探討在不同功率的光注入和溫度變化對元件之影響，在三端的部分，以不同閘極輸入的方式去了解驅動的機制，並將實驗結果作比較，探討在閘極輸入正負電壓、電流控制效率的影響，最後，對光輸出的部分作頻譜的量測，以及在不同輸入電流下對峰值波長和輸出功率的影響。

　　The purpose of this paper is to analyze and fabricate the optoelectronic switch of long wavelength based on InP materials systems. We combine p-n-p-n device with multi-quantum well InGaAs/InGaAsP to promote emission efficiency. At first, we compare the current-voltage characteristic of different device to realize the influence of doping concentration on switching voltage. In the two-terminal p-n-p-n device, we discuss the influence of current-voltage characteristic under different light injection and temperature. According to the result of the experiment, we compare the current- and voltage-controlled efficiencies in the section of three-terminal device. Finally, we measure the light output of device with the peak wavelength and discuss the effect of peak and output power at different injection current.

[1] J. H. Hur, S.G. Hummel, K. M. Dzurko, P. D. Dapkus, H. R. Fetterman, and M. A. Gunderson, “GaAs-based optothyristor for pulse power applications,” IEEE Trans. Electron Devices, vol 37, pp. 2520-2523, 1990.
[2] J. H. Zhao, D. Coblentz, J Man, S. Mcafee, T. Burke, M. Weiner, W. Buchwald, and K. Jones, ”An InP-based optothyristor for pulsed switching applications” IEEE Electron Devices, vol. 14, pp. 140-143, 1993.
[3] J. H. Zhao, D. Larson, M. Weiner, A. Chin, J. M. Ballingall and T. Yu, “Dynamic I-V characteristic of an AlGaAs/GaAs-based optothyristor for pulse power-switching applications,” IEEE Electron Devices, vol.13, pp.161-167, 1992.
[4] S. Wang, Q. Zhang, Z. Li, and H. Tian,“GaAs/AlGaAs p-n-p-n negative resistance las with low threshold current density,” IEEE Proc. I, Solid State Electron Dev.,vol. 129, pp. 306-309, 1982.
[5] K. Kasahara, N. Hamao, M. Sugimoto and T. Yanas,“Double heterostucture optoelectronic switch as a dynamic memoy with low-power consumption,” Appl. Phys. Lett., vol. 52, p. 679-681, 1988.
[6] G. W. Taylor, R. S. Mand, J. G. Simmons and A. Y. Cho, “Ledistor a three-terminal double heterostructue optoelectronic switch,” Apply. Phys. Lett.,vol. 50, p. 338-342, 1987.
[7] G. W. Taylor, R. S. Mand, J. G. Simmons and A. Y. Cho, “Optically induced switching in a p channel double heteostructure optoelectronuc switch,” Appl. Phys. Lett., vol. 49, p.1406-1413, 1986.
[8] A. Saaski, S. Metavikul, M. Itoh, and Y. Takeda,“Light-to-light tranceducrs with amplication,” IEEE Trans. Electron Devices, vol. 35, p. 780-782, 1988.
[9] M. Kuijk, P. L. Heremans, and R. Vonckx, “Depleted double-heterojunction optical thyristor,” Appl. Phys. Lett., vol. 64, p.2073-2075, 1994.
[10]P. Heremans, M. Kuiik, and G. Borghs, “Differential optical PnpN switch operating at 16 MHz with 250-fj optical input energy,” Appl. Phys. Lett., vol. 65, p.19-21, 1994.
[11] J. S. Osinski, Y. Zou, P.Grodzinski, and A. Mathur, “Low-Threshold Current-Density 1.5um Lasers Using Compressively Strained InGaAsP Quantum Wells,” IEEE Photonics Letters, vol. 4, p.10-13, 1992.
[12]James H. Swoger, John G. Simmons, Frank R. Shepherd, David A. Thompson, Douglas Beckett, and M.N. Cleroux, “Spontaneous Oscilations in the InP-InGaAsP Lasing Optolectonic Switch (LOES),”IEEE Journal of Quantum Electronic, vol 31, No. 7, pp.1308-1314, 1995.
[13] Doo Gun Kim, Hee Hyun Lee, Woon Kyung Choi, and Young Wan Choi, “Lasing characteristics of InGaAs/InGaAsp multiple-quantum well optical thyistor operating at 1.561um,” Appl. Phys. Lett., vol. 82, pp.158-160,2003.
[14] S. M. Sze, “Physics of Semiconductor Devices,” John Wiley & Sons, Inc., pp.190- 230,1983.
[15] G. W. Taylor, and Jianhong Cai, “Theory of Operation of the Double-Heterostructue Optoelectronic Switch Operating as a Laser,” IEEE of Quantum Electronics, vol. 38, pp. 1242-1252, 2002.
[16] J. J. Ebers, “Four-Terminal p-n-p-n Transistor,” Proc. IRE, 40, 1361 (1952).
[17] MITSUO FUKUDA, “Optical Semiconductor Devices,” NTT Opto-electronics Laboratories, pp.73- 87.1996.
[18] H. Asai, “Epitaxial growth of III-IV compound semiconductors and its applications,” doctoral thesis, Nagoya University, Nagoya, Japan, p. 238 1992.
[19]D.G.Kim, J. J. Lee, Y. W. Choi, Membe, IEEE, S. Lee, B. K. Kang, S. H. Kim, N. Futakuchi, and Y. Nakano, Mmber, IEEE, “Waveguie Type PnpN optical Thyistor Operating at 1.55um,” IEEE Photonics Technology Letter, vol. 12, NO. 9, pp. 208-211, 2000.
[20] David A. Suda, Russell E. Hayes, and Anton S. Rohlev, ”Transient Analysis of p-n-p-n Optoelectronic Device,” IEEE Transactions on Electron Devices, vol. 39, pp.1858-1864, 1992.
[21] P.L. Heremans, M. Kuijk, G. Borghs, D. A. Suda, R. E. Hayes, and R. Vounckx, “Fast turn-off of two-terminal double-heterojunction optical thyristors,” Appl. Phys. Lett., vol. 11, pp.1326-1327, 1992.
[22] J. H. Swoger, C. Qiu, J. G. Simmons, D. A. Thompson, F. Shepherd, D. Beckeet, M. Cleroux, “ Strained Layer InP/InGaAsP Lasing Opto-Electronic Switch (LOES),” IEEE Photonics Technology Letter, vol. 6, NO.8, pp.927-929, 1994.
[23] Kunihiko Hara, Keisuke Kojima, Member, IEEE, Kazumasa Mitsunaga, and Kazuo Kyuma, Membr, “AlGaAs-GaAs pnpn Differential Optical Switch, ” IEEE Journal of Quantum Electronics, vol. 28, No. 5, pp.1992.
[24] M. S. Chen, “Fabrication and Characterization of Double Heterostructure Optoelectronic Switching Device,” National Cheng-Kung University, 1994.