本篇論文研究利用兩道波長為325 nm之等強度雷射光所產生之干涉條紋製作週期性結構，再分別討論利用正向曝光方式(forward exposure)與背向曝光方式(backside exposure)製作一維週期性結構時所產生的差異: 利用正向曝光方式製作週期為239 nm一維結構時，易造成結構倒塌和彎曲。若利用背向曝光方式製作週期為239 nm一維結構時，可藉由曝光時間的不同而製作出不同深寬比的結構且結構比較完整。依此，我們旋轉基板角度，即可製作出週期為350 nm的二維孔洞結構。接著使用電漿感應耦合蝕刻系統(Inductively Coupled Plasma Reactive Ion Etch)對以正向曝光方式製作的一維結構進行蝕刻，並討論改變蝕刻參數對結構輪廓造成的影響。
最後，我們使用嚴格耦合波分析法(Rigorous Coupled Wave Analysis, RCWA)計算相位光罩(Phase Mask)所需的深度，依此分別製作出一維、二維的相位光罩。探討其在不同偏振與曝光方式下所產生的結果: 在背向曝光方式下若利用週期為356 nm一維相位光罩的正負一階光干涉可得到週期為178 nm的一維結構，而以二維相位光罩可製作出三維結構。然而，我們成功解決當光罩週期小於入射光波長時，一階繞射效率很低而無法輕易製作出週期減半的結構。因此利用阻擋層去阻擋週期為232 nm的光罩的零階光，而使一階光彼此干涉而產生週期為116 nm的一維結構。

In this study, the fabrication of periodic structures was based on the interference fringes produced by two equal intensity laser beams (wavelength= 325 nm). The results of fabricating the one-dimensional periodic structure were compared with by using the forward exposure method and the backside-exposure method. When using the forward exposure method to fabricate the one-dimensional periodic structure with a period of 239 nm, the structure could easily collapse and bend. However, if using the backside-exposure method to fabricate the one-dimensional periodic structure with a period of 239 nm, we can fabricate structures with different aspect ratio by varying the exposure time and these structures are regular and uniform. Furthermore, we produced the two-dimensional hole structure with a period of 350 nm by rotating the substrate. Then the inductively coupled plasma etching system was introduced to etch the one-dimensional periodic structure fabricated by the forward exposure method. And the impact on the structure profile by changing the etching parameters was discussed.
Finally, we used the rigorous coupled-wave analysis to estimate the required depth of the phase mask. The one-dimensional and the two-dimensional phase mask were then fabricated, respectively. The results from the different polarizations and exposure methods were discussed. When using the backside-exposure method with the one-dimensional phase mask with a period of 356 nm, the one-dimensional structure with a period of 178 nm was produced with the 1st order diffracted beams from the phase mask. By using the two-dimensional phase mask, the three-dimensional structures were fabricated. Furthermore, when the period of mask is less than the wa-velength of incident light, the diffraction efficiencies of 1st order beams are getting smaller as compared with that of 0th order beam. Therefore, we used the stop layer to suppress the zero-order beam from the mask with a period of 232 nm. The one-dimensional structure with a period of 116 nm was produced with interference of the 1st order beams from the mask.

1.K. O. Hill, B. Malo, F. Bilodeau, D. C. Johnson, and J. Albert, "BRAGG GRATINGS FABRICATED IN MONOMODE PHOTOSENSITIVE OPTICAL FIBER BY UV EXPOSURE THROUGH A PHASE MASK," Appl. Phys. Lett. 62, 1035-1037 (1993).
2.G. E. Moore, "Cramming more components onto integrated circuits (Reprinted from Electronics, pg 114-117, April 19, 1965)," Proceedings of the Ieee86, 82-85 (1998).
3.E. H. Anderson, K. Komatsu, and H. I. Smith, "ACHROMATIC HOLOGRAPHIC LITHOGRAPHY IN THE DEEP ULTRAVIOLET," J. Vac. Sci. Technol. B 6, 216-218 (1988).
4.X. L. Chen, S. H. Zaidi, S. R. J. Brueck, and D. J. Devine, "Interferometric lithography of sub-micrometer sparse hole arrays for field-emission display applications," J. Vac. Sci. Technol. B 14, 3339-3349 (1996).
5.M. Farhoud, M. Hwang, H. I. Smith, M. L. Schattenburg, J. M. Bae, K. Youcef-Toumi, and C. A. Ross, "Fabrication of large area nanostructured magnets by interferometric lithography," IEEE Trans. Magn. 34, 1087-1089 (1998).
6.T. A. Savas, M. Farhoud, H. I. Smith, M. Hwang, and C. A. Ross, "Properties of large-area nanomagnet arrays with 100 nm period made by interferometric lithography," J. Appl. Phys. 85, 6160-6162 (1999).
7.X. L. Chen, and S. R. J. Brueck, "Imaging interferometric lithography: A wavelength division multiplex approach to extending optical lithography," J. Vac. Sci. Technol. B 16, 3392-3397 (1998).
8.E. J. Saccocio, "APPLICATION OF LLOYDS MIRROR TO X-RAY HOLOGRAPHY," Journal of the Optical Society of America 57, 966-& (1967).
9.L. F. Johnson, G. W. Kammlott, and K. A. Ingersoll, "GENERATION OF PERIODIC SURFACE CORRUGATIONS," Appl. Optics 17, 1165-1181 (1978).
10.T. A. Savas, M. L. Schattenburg, J. M. Carter, and H. I. Smith, "Large-area achromatic interferometric lithography for 100 nm period gratings and grids," J. Vac. Sci. Technol. B 14, 4167-4170 (1996).
11.J. A. Hoffnagle, W. D. Hinsberg, M. Sanchez, and F. A. Houle, "Liquid immersion deep-ultraviolet interferometric lithography," J. Vac. Sci. Technol. B 17, 3306-3309 (1999).
12.H. H. Solak, and C. David, "Patterning of circular structure arrays with interference lithography," J. Vac. Sci. Technol. B 21, 2883-2887 (2003).
13.H. H. Solak, "Space-invariant multiple-beam achromatic EUV interference lithography," Microelectronic Engineering 78-79, 410-416 (2005).
14.A. M. Prenen, J. C. A. van der Werf, C. W. M. Bastiaansen, and D. J. Broer, "Monodisperse, Polymeric Nano- and Microsieves Produced with Interference Holography," Adv. Mater. 21, 1751-+ (2009).
15.R. D. Guenther, Modern optics (JOHN WILEY and SONS, 1990).
16."SU8_2002-2025 ", http://www.microchem.com/products/pdf/SU8_2002-2025.pdf.
17.A. Ghatak, ed. Optics (2005).
18.L. Pang, M. Nezhad, U. Levy, C. H. Tsai, and Y. Fainman, "Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask," Appl. Optics 44, 2377-2381 (2005).
19.J. S. Michael Quirk ed. Semiconductor Manufacturing Technology.
20.B. Q. Wu, A. Kumar, and S. Pamarthy, "High aspect ratio silicon etch: A review," J. Appl. Phys. 108 (2010).
21.A. Kamto, R. Divan, A. V. Sumant, and S. L. Burkett, "Cryogenic inductively coupled plasma etching for fabrication of tapered through-silicon vias," J. Vac. Sci. Technol. A 28, 719-725 (2010).
22.M. W. Pruessner, W. S. Rabinovich, T. H. Stievater, D. Park, and J. W. Baldwin, "Cryogenic etch process development for profile control of high aspect-ratio submicron silicon trenches," J. Vac. Sci. Technol. B 25, 21-28 (2007).
23.A. L. G. C.C. Welch, T. Wahlbrink, M.C. Lemme, T. Mollenhauer, "Silicon etch process options for micro- and nanotechnology using inductively coupled plasmas," (2006).
24.M. J. de Boer, J. G. E. Gardeniers, H. V. Jansen, E. Smulders, M. J. Gilde, G. Roelofs, J. N. Sasserath, and M. Elwenspoek, "Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures," J. Microelectromech. Syst. 11, 385-401 (2002).
25.H. V. Jansen, M. J. de Boer, K. Ma, M. Gironès, S. Unnikrishnan, M. C. Louwerse, and M. C. Elwenspoek, "Black silicon method XI: oxygen pulses in SF6plasma," Journal of Micromechanics and Microengineering 20, 075027 (2010).
26.U. Sokmen, A. Stranz, S. Fundling, H. H. Wehmann, V. Bandalo, A. Bora, M. Tornow, A. Waag, and E. Peiner, "Capabilities of ICP-RIE cryogenic dry etching of silicon: review of exemplary microstructures," Journal of Micromechanics and Microengineering 19 (2009).
27.R. Dussart, M. Boufnichel, G. Marcos, P. Lefaucheux, A. Basillais, R. Benoit, T. Tillocher, X. Mellhaoui, H. Estrade-Szwarckopf, and P. Ranson, "Passivation mechanisms in cryogenic SF6/O-2 etching process," Journal of Micromechanics and Microengineering 14, 190-196 (2004).
28.J. Pereira, L. E. Pichon, R. Dussart, C. Cardinaud, C. Y. Duluard, E. H. Oubensaid, P. Lefaucheux, M. Boufnichel, and P. Ranson, "In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O-2 cryoetching process," Appl. Phys. Lett. 94 (2009).
29.A. F. Isakovic, K. Evans-Lutterodt, D. Elliott, A. Stein, and J. B. Warren, "Cyclic, cryogenic, highly anisotropic plasma etching of silicon using SF6/O-2," J. Vac. Sci. Technol. A 26, 1182-1187 (2008).
30.J. M. Stillahn, J. M. Zhang, and E. R. Fisher, "Surface interactions of SO2 and passivation chemistry during etching of Si and SiO2 in SF6/O-2 plasmas," J. Vac. Sci. Technol. A 29 (2011).
31.P. E. Dyer, R. J. Farley, R. Giedl, C. Ragdale, and D. Reid, "STUDY AND ANALYSIS OF SUBMICRON-PERIOD GRATING FORMATION ON POLYMERS ABLATED USING A KRF LASER-IRRADIATED PHASE MASK," Appl. Phys. Lett. 64, 3389-3391 (1994).
32.D. J. Shir, S. Jeon, H. Liao, M. Highland, D. G. Cahill, M. F. Su, I. F. El-Kady, C. G. Christodoulou, G. R. Bogart, A. V. Hamza, and J. A. Rogers, "Three-Dimensional Nanofabrication with Elastomeric Phase Masks," The Journal of Physical Chemistry B 111, 12945-12958 (2007).
33.S. Jeon, E. Menard, J. U. Park, J. Maria, M. Meitl, J. Zaumseil, and J. A. Rogers, "Three-dimensional nanofabrication with rubber stamps and conformable photomasks," Adv. Mater. 16, 1369-1373 (2004).
34.W.-C. C. Chun-Hung Lin, Chung-I Hsieh, Wen-Huei Chang, "Optical characterization of two-dimensional photonic crystals based on spectroscopic ellipsometry with rigorous coupled-wave analysis," Microelectronic Engineering 83, 1798-1804 (2006).
35.D. J. Shir, S. Jeon, H. Liao, M. Highland, D. G. Cahill, M. F. Su, I. F. El-Kady, C. G. Christodoulou, G. R. Bogart, A. V. Hamza, and J. A. Rogers, "Three-dimensional nanofabrication with elastomeric phase masks," J. Phys. Chem. B 111, 12945-12958 (2007).
36.A. Ghatak, Optics (2005).