本研究主要著重在氣相沈積合成鈣鈦礦薄膜載在 n-type 結構之太陽能電池以及在不 同反應時間、溫度與壓力條件下合成鈣鈦礦膜之分析。由初期高真空下的共蒸鍍系統 發展 出 的 不 同 氣 相 沈 積 合 成 法 , 透過 緩 慢 的 反 應 過 程 來 控制 PbI2 與 CH3NH3I(Methylammonium iodide, MAI)的反應來合成鈣鈦礦,進而達到較佳的鈣鈦礦 成核與成長過程,氣相沈積合成之鈣鈦礦晶粒大且無破洞可減少缺陷與漏電的產生,在 吸收(UV-vis)與受激螢光放光(Photoluminescence)等光學分析上皆與溶液製成法合成 之高效率鈣鈦礦有相同的結果,說明氣相沈積為可合成高效率鈣鈦礦的方法之一。透 過高溫爐管加熱系統進行單加熱區的低壓化學氣相沈積來控制反應合成鈣鈦礦的環 境,MAPbI3 鈣鈦礦元件效率最高可達到 15.33%。除了使用在傳統之 MAPbI3 的鈣鈦礦 外也可用於不同材料,FAPbI3(Formamidinium lead iodide)是一個能隙較 MAPbI3 窄的材 料,約為 1.45 eV (MAPbI3 為 1.54 eV),因此吸光波長範圍會紅移而提升元件的光電流值, 進一步提升元件效率,FAPbI3 鈣鈦礦元件效率可達到 11.41%。

In this study, we demonstrated low-pressure chemical vapor deposition (LPCVD) method to fabricate perovskite solar cells. This method substituted for the solution process because it had slow reaction rate between PbI2 and CH3NH3I (Methylammonium iodide, MAI). The slow reaction rate produced a dense and uniform perovskite film and improved its grain size of ~500 nm. The power conversion efficiency of MAPbI3 perovskite solar cell obtained by LPCVD reached 15.33%. We also demonstrated HC(NH2)2PbI3FAPbI3 perovskite solar cell reached 11.41% by LPCVD method.

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