本論文利用分子束磊晶成長高品質的氮化硼薄膜，藉由比較成長過程中有無氫電漿通入的樣品數據，研究氫電漿對於利用分子束磊晶系統成長氮化硼薄膜的效應。根據氫電漿對基板表面的作用原理，可以得知氫電漿鋪在基板上，具有增長蒸鍍至基板的表面原子(硼原子)在基板表面的擴散長度(Diffusion length)。我們期望氫電漿的通入可以改善樣品的表面形貌，使得樣品表面更具有薄膜狀的結構，獲得品質更好的h-BN薄膜。
氫電漿的通入，除了增長硼原子在基板表面的擴散路徑，利於薄膜的成長外，亦可增加硼原子與氮氣電漿在表面接觸的機率，提升六方氮化硼的產量。我們目前成長h-BN薄膜所遭遇到的問題，就是產量太過於稀少，導致許多的量測都無法進行，無法判斷是否成功長出h-BN。我們選擇在成長過程通入氫電漿，就是希望能夠增加產量，才能夠對樣品進行更多的量測。
根據文獻的研究，氫電漿除了影響樣品的表面，也在氮氣-氫氣混合電漿中扮演重要角色，其影響的層面我們也一併探討。

In this study, we demonstrate two kinds of methods of synthesizing hexagonal Boron Nitride (h-BN) in order to study the hydrogen plasma effects on h-BN thin film growth by plasma-assisted molecular beam epitaxy (PAMBE) system on Si(111) substrate. We found that the hydrogen atoms which deposited on substrate could increase the diffusion length of metal atoms during epitaxial growth, which means the quality might be improved. We used the reflection high energy electron diffraction (RHEED) to in situ monitor the epitaxial thin film surface crystalline phase. We also used scanning electron microscopy (SEM) to measure our sample’s morphology, and analyzed a-axis and c-axis lattice constants of our sample by using cross-sectional tunneling electron microscopy (TEM); and detected phonon vibrational modes of our sample by using Raman spectroscopy.

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