我們目前市面上最常販售的深紫外光發光二極體元件主要都是屬於大尺寸的元件，但是元件尺寸較大的元件有著注入高電流密度時電流會聚集在電極區域附近，尤其是當元件尺寸越來越大時此種效應就越明顯我們稱此效應為電流擁擠效應，電流擁擠效應會對傳統大尺寸的發光二極體造成電流分布不平均且元件熱效應明顯這也會間接造成高注入時元件的發光效率下降；為了改善電流擁擠效應我們採用了元件尺寸微型化並藉由不同尺寸100μm、80μm、60μm、40μm以及20μm元件去探討其光電特性改變以及優缺點，其中我們可以發現當元件尺寸縮小時在相同電流密度底下會因為小尺寸元件的應力釋放使極化電場降低並促使臨界電壓的下降，而缺點在我們製作發光二極體元件時因為ICP對側壁氮化鎵的化學鍵結斷鍵而導致的漏電途徑因而在元件尺寸縮小時其非輻射複合的影響也就越嚴重，因為當尺寸縮小時側壁與發光面積之占有比例越高而造成邊緣效應越明顯這也是微型化元件的最大缺點。

The most commonly sold deep ultraviolet light-emitting diode components on the market today are mainly large-sized components, but large-sized components have high current density when injected into the vicinity of the electrode area, especially when This effect becomes more obvious as the component size becomes larger and larger. We call this effect the current crowding effect. The current crowding effect will cause uneven current distribution of the traditional large-size light-emitting diodes, and the obvious thermal effect of the component will also indirectly cause high The luminous efficiency of the device decreases during the injection; in order to improve the current crowding effect, we have adopted the miniaturization of the device size and explored its optoelectronic characteristics and its advantages and disadvantages with different sizes of 100 μm, 80 μm, 60 μm, 40 μm, and 20 μm devices. When the element size is reduced, the polarization field is reduced and the critical voltage is reduced due to the stress release of the small-sized element under the same current density. The disadvantage is that the chemical bonding of the side wall gallium nitride by ICP when we make light-emitting diode elements. The leakage path caused by broken keys is therefore non-radiative when the component size is reduced The combined effects of the more serious, because when the side walls downsized higher occupancy ratio of the light emitting area of the edge effect caused by the more significant element which is miniaturized biggest drawback.

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