中文摘要
本論文主要探討有機材料PVK作為緩衝層對於氧化鎳/氧化鋅異質接面光感測特性之研究。首先，將氧化鎳前驅溶液旋轉塗佈在定義好圖形的ITO透明導電玻璃基板上，接著旋轉塗佈PVK薄膜在氧化鎳薄膜上，然後濺鍍氧化鋅晶種層於PVK薄膜，再使用化學水浴沉積法合成氧化鋅奈米柱陣列，最後在氧化鋅奈米柱陣列上濺鍍銀電極，完成PVK緩衝層紫外線光感測器。PVK薄膜是用來抑制逆向偏壓的漏電流與改善介面的缺陷。本實驗透過X射線光電子光譜(XPS)、X光繞射儀(XRD)、紫外光-可見光光譜儀、掃描式電子顯微鏡，對光感測器各層薄膜進行晶體結構、表面形貌、薄膜分析之探討。
接著，量測及分析PVK緩衝層對氧化鎳/氧化鋅異質接面光感測特性之影響。在照射380 nm波長之光下，氧化鎳/氧化鋅感測器與氧化鎳/PVK/氧化鋅感測器在逆向偏壓3V下光暗電流比分別為11.5與332.7，紫外光–可見光互斥比分別為25.78與 725.95，此結果是歸功於PVK緩衝層降低了漏電流與產生較低的可見光光電流。有PVK緩衝層之光感測器在照射380 nm逆向偏壓3V下呈現出57.31 A/W的響應度與3.66×1014 Jones的探測率。本研究之紫外線光感測器具有低成本、製程簡易、可大量製作，此低成本高探測率的紫外線光感測器有機會取代現有之感測器。

Abstract
This thesis investigates the effects of organic material poly-(N-vinylcarbazole) (PVK) in-termediate layer on the performance of p-NiO/n-ZnO nanorods arrays heterojunction photodetector (PD). Nickel oxide (NiO) precursor solution was spin-coated onto pat-terned indium tin oxide (ITO) glass substrate. Subsequently, an organic PVK layer was spin-coated on top of the NiO thin film followed by sputtering a ZnO seed layer on the pre-defined PVK thin film. ZnO nanorods was then synthesized on the ZnO seed layer using chemical bath deposition (CBD) method. Finally, a silver film was sputtered on the ZnO nanorods arrays as the electrode. The PVK thin film reduces the reversed-bias leak-age current and minimizes the negative impact caused by the interface defects. Film’s quality and surface morphologies were analyzed by X-ray photoelectron spectroscopy, X-ray diffractometer, UV-VIS-NIR spectrophotometer, and scanning electron microscopy.
Under 380 nm UV light illumination and at a reversed bias of 3V, the photo/dark current ratio of the p-NiO/n-ZnO and the p-NiO/PVK/n-ZnO PDs are 11.5 and 332.7, respectively. The UV-to-visible rejection ratio (R380 nm/R450 nm) are 25.78 and 725.95, respectively. This great performance is a result from minimizing the leakage current and lower photocurrent generation under visible light illumination. Under UV 380 nm light illumina-tion, the studied PD with a PVK buffer layer and at reversed bias of 3V demonstrate re-sponsivity of 57.31 A/W and detectivity of 3.66×1014 Jones. The studied PD has ad-vantages of low-cost processing, simple to produce, and suitable for mass production. Therefore, this low-cost and high performance PD has a great potential and may be able to replace existing UV detecting devices.

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