本研究以兩步法成長鈣鈦礦薄膜，先以旋轉塗布法成長溴化鉛(PbBr2)薄膜，再將其以化學氣相沉積法反應鈣鈦礦薄膜。首先，我們控制溫度以成長不同結晶性的PbBr2薄膜，發現以非晶的PbBr2薄膜成長的鈣鈦礦薄膜所製成的元件有較好的亮度及電流效率。接著我們改變化學氣相沉積系統中MABr與氯化膽鹼(CC)的比例，以氯化膽鹼的劑量來控制鈣鈦礦薄膜的結晶速率，添加越多的氯化膽鹼可以使鈣鈦礦結晶速度越快，但若結晶速度太快薄膜會有孔洞產生且表面較粗糙以降低薄膜品質，因此於化學氣相沉積系統中添加550 mg的MABr與206.3 mg的CC成長的鈣鈦礦薄膜所製成的元件表現最佳。另外，發現於化學氣相沉積系統中添加氯化膽鹼可以使氯化膽鹼中的氯離子和MAPbBr3中部份的溴離子進行置換形成MAPbClxBr3-x，使發光波段由536 nm藍移至516 nm。
最後，我們添加適量的PEA於PbBr2的前驅溶液中以成長出高品質的鈣鈦礦薄膜，並將其作為發光層製備成鈣鈦礦發光二極體元件，亮度由4070 cd/m2大幅提升至20869 cd/m2；電流效率也由1.26 cd/A增加至3.99 cd/A。

In this study, the perovskite film was grown by two-step process. The lead bromide film was first grown by spin coating, and then the perovskite film was reacted by chemical vapor deposition. First, we controlled the temperature to grow PbBr2 films with different crystallinity. It was found that perovskite light-emitting diode made of a perovskite film grown with an amorphous PbBr2 film have better brightness and current efficiency. Then we changed different ratio of MABr and choline chloride (CC) in the chemical vapor deposition system. It was found that the more choline chloride added, the perovskite film can grow faster. But if the crystallization rate is too fast, the film will have pores and the surface is rough to reduce the film quality. Therefore, perovskite light-emitting diode made by adding 550 mg of MABr and 206.3 mg of CC in the chemical vapor deposition system performed best. In addition, it was found that the addition of choline chloride to the chemical vapor deposition system can replace the chloride ions in choline chloride and some of the bromide ions in MAPbBr3 to form MAPbClxBr3-x, and shift the luminescence band from 536 nm blue to 516 nm. Finally, we added a proper amount of PEA in the PbBr2 precursor solution to grow a high-quality perovskite film, and used it as a light-emitting layer to prepare a perovskite light-emitting diode device, and the brightness was greatly improved from 4070 cd/m2 to 20869 cd/m2; current efficiency also increased from 1.26 cd/A to 3.99 cd/A.

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