透過脈衝雷射沉積法將Bi2Te3與Sb2Te3成長在無晶相之鈉玻璃基板，並將其長成多層膜結構，實驗分為兩部分，一部分是固定總厚度(96nm)改變層數分別從2層到24層，之後透過霍爾量測確認材料的傳輸性質，發現在鈉玻璃基板上成長的Bi2Te3 Sb2Te3多層膜是P型、，再利用四點量測得到電阻率；透過Seebeck effect 確認材料Seebeck 係數隨層數變化，發現發現12層(8nm)有最高的Seebeck與PF(Power Factor)。之後第二部分是就是由8nm的參數最變化，固定雙層膜(8nm/8nm)的厚度改變總厚度，發現當層數增加的時候Seebeck也跟著增加但是在10層的時候達最大值，不會無限上升。由此可以知道介面可以有效提升Seebeck提高PF，但是由於電阻率也會上升會降低PF，但是Seebeck的效應是平方倍，所以整體PF還是上升的。

In this work we report the synthesis of bismuth tellurium(Bi2Te3) and Antimony telluride(Sb2Te3)thin films on soda glass substrate by using pulsed laser deposition(PLD) and we have fabricated Bi2Te3/Sb2Te3 alternate layered SL films by (PLD) and compared the differences between them.

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