本論文首先使用TSMC 0.18µm製程，實現雙平衡架構之環形混頻器，本次設計主要將RF螺旋巴倫接地點，改用L-C低通濾波器取代，使巴倫在射頻訊號操作頻帶內其L-C低通濾波器可以將射頻訊號短路至地端，中頻訊號透過L-C低通濾波器所提供的傳輸路徑輸出並提升RF-to-IF隔離度。經過量測後電路的轉換耗損在射頻頻率操作於7-23GHz為10.4-13.4dB，在操作頻帶內RF-to-IF隔離度皆大於40dB，而P1dB為8dBm，晶片面積為0.76 × 0.51mm2。
第二部份延續上章，實作微小化鏡頻抑制混頻器，使用一個新式的雙重巴倫減少Hartley鏡頻混頻器在射頻端的功率分配器的使用，同時提供中頻訊號傳輸路徑。經過量測後電路的轉換耗損在射頻頻率操作於8-21GHz為19-22dB，在操作頻帶內RF-to-IF隔離度皆大於15dB，而P1dB為14dBm，經由相位補償電路所量測之IRR在20GHz時有最佳值34dBc，晶片面積為0.9 × 0.74 mm2。
第三部份使用WIN 0.15μm PHEMT 製程實作單平衡四次諧波混頻器，本次設計將四次諧波混頻器整合中頻取出電路，可提高RF-to-IF隔離度。最後模擬結果電路的轉換耗損在射頻頻率操作於21.-35GHz可達11.3-15.1dB，在操作頻帶內RF-to-IF隔離度皆大於28.8dB，晶片面積為0.67 × 0.75mm2。

The first part of this thesis presents an X-K band MMIC doubly balanced diode ring mixer, which has been created using a TSMC 1P6M CMOS 0.18 µm multilayer structure. An L-C low-pass filter is substituted for the shorted circuit of the spiral balun, allowing for the simultaneous generation of a grounded path for the RF signal as well as a pass path for the IF signal. Therefore, a Marchand spiral balun, which includes a low-pass filter, is proposed to extract the IF signal as well as maintain the balun performance and enhance RF-to-IF isolation. The die size of the proposed compact configuration is less than 0.76 × 0.51 mm2. The measured results indicate that the conversion loss is 10.4—13.4 dB. The RF-to-IF isolation is better than 40 dB, and the P1dB is 8 dBm.
The second part presents a compact broadband single-side band mixer with a dimension of 0.9 × 0.74 mm2. It is designed and fabricated using a TSMC 1P6M CMOS 0.18 µm multilayer structure. The circuit is based on the structure of a Hartley image rejection mixer and a novel dual RF balun, which is used to eliminate the requirement for power divide. The measured results demonstrate that the conversion loss is 19—21 dB, the RF-to-IF isolation is better than 15 dB and the P1dB is 14 dBm. The IRR measurement, which is conducted using phase calibration, is found to be 34 dBc at 20 GHz.
The third part presents a single balanced 4× sub-harmonic MMIC mixer with a compact IF extraction using the 0.15 µm GaAs pHEMT process. The compact IF extraction is performed by a RF band-pass filter with an IF low-pass filter to increase RF-to-IF isolation and reduce the chip size as compared to the conventional SHM. The simulated results demonstrate that a 11.3-15.1 dB conversion loss, a 28.8 dB high RF-to-IF isolation, a 40 dB high LO-to-RF isolation, a 60 dB high 4LO-to-RF isolation over 21-35 GHz RF bandwidth can be achieved. The compact IF extraction circuit supports an IF frequency ranging from DC to 3.1 GHz. The chip size is as small as 0.67 × 0.75 mm2.

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