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研究生: 潘祥華
Pan, Hsiang-Hua
論文名稱: 以多種熱處理方法及雙重離子取代法優化Ⅰ2-Ⅱ-Ⅳ-Ⅵ4族薄膜太陽能電池光電轉換效率之研究
Enhancement of the Photoelectric Conversion Efficiency of I2-II-IV-VI4 Thin Film Solar Cells by Different Heat Treatments and Double Ions Substitution Method
指導教授: 向性一
Hsiang, Hsing-I
學位類別: 碩士
Master
系所名稱: 工學院 - 資源工程學系
Department of Resources Engineering
論文出版年: 2021
畢業學年度: 109
語文別: 中文
論文頁數: 205
中文關鍵詞: Ⅰ-Ⅱ-Ⅳ-Ⅵ族薄膜太陽能電池第一性原理預測加壓硒化製程加壓預燒結製程雙重離子取代法硒化機制
外文關鍵詞: Ⅰ-Ⅱ-Ⅳ-VI thin film solar cells, first-principles prediction, pressure-assisted selenization process, pressure-assisted pre-sintering process, double ions substitution method
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  • 本文旨在探索最適合Ⅰ-Ⅱ-Ⅳ-Ⅵ族薄膜太陽能電池的熱處理程序,並透過雙重離子取代來提升薄膜太陽能電池的轉換效率。此外並結合材料模擬及元件實作探討Ⅰ-Ⅱ-Ⅳ-Ⅵ族化合物半導體薄膜太陽能電池的光電性質以及硒化機制。在材料模擬方面,本文使用CASTEP/Materials Studio模擬軟體預測雙重離子取代法對材料性質的影響。至於在實作方面,採用非真空直接升溫合成法來制備Ⅰ-Ⅱ-Ⅳ-Ⅵ族太陽能電池中的硫化銅鋅錫(Cu2ZnSnS4,CZTS)或是雙重離子取代法中陽離子取代的硫化銅銀鋅錫((AgxCu1-x)2ZnSnS4,ACZTS)前驅物(precursor),透過旋轉塗佈製備生胚薄膜。再使用加壓硒化製程以及加壓預燒結製程等快速熱退火製程對生胚薄膜進行硒化熱處理。研究結果發現,透過雙重離子取代法以及在加壓硒化製程前先行施以加壓預燒結製程可使吸收層薄膜的霍爾電性獲得顯著的改善。雖然由於薄膜太陽能電池中窗口層的微結構不佳並同時在窗口層與上電極之間形成了低品質的異質接面,進而劣化元件的光電轉換效率,不過仍然清楚證明了可以透過兩階段快速熱退火製程以及雙重離子取代使元件的光電轉換效率由0.034%顯著的提升至0.724%。
    除了透過多種熱處理方法及雙重離子取代法優化薄膜太陽能電池的轉換效率外,經實驗發現當CZTS薄膜經過加壓硒化製程後,其薄膜微結構將會由原本的單層結構轉變成大晶粒層在上、細晶層在下的雙層結構。本文成功提出了加壓硒化製程的反應機制,整個反應依序為CZTSSe再結晶、液相燒結最後為固相燒結。相信透過硒化機制的探討能提升未來對CZTSSe大晶粒微結構及緻密度的掌控性。

    In this study, the photoelectric conversion efficiency of the I-II-IV-VI thin film solar cell (TFSC) was effectively promoted not only through the optimization of the heat treatment process but also through the double ions substitution method. The CASTEP/Material Studio simulation software was used to predict the double ions substitution effect on the electric properties of the ACZTSSe. The direct heating up method was used to synthesize the CZTS or ACZTS precursor, followed by spin coating to fabricate the green thin film. Next, the different rapid thermal annealing methods such as the pressure-assisted selenization process and the pressure-assisted pre-sintering process were used to optimize the selenization process. Finally, the photoelectric conversion efficiency of the TFSC prepared by using the optimized heat treatment and double ions substitution method was measured by the Solar Simulator. The results show that the electrical properties of the absorber can be significantly improved through the double ions substitution method and two-step rapid thermal annealing process. However, due to the poor microstructure of the window layer (ITO) in the TFSC and the low-quality heterojunction between the window layer and the upper electrode, the photoelectric conversion efficiency of the TFSC has deteriorated. However, the conversion efficiency of the TFSC was significantly promoted from 0.034% to 0.724% by the optimization of the heat treatment method and double ions substitution method. In addition, this study also successfully proposed the reaction mechanism of the pressurized selenization process. The entire reaction was CZTSSe recrystallization, liquid phase sintering and finally solid-phase sintering.

    摘要 I Extended Abstract II 誌謝 VII 第一章 緒論 1 1-1 研究的源起-全球暖化 1 1-2 各世代太陽能電池的發展 4 1-3 薄膜太陽能電池簡介 6 1-4 研究動機 9 第二章 文獻回顧 11 2-1 Ⅰ-Ⅱ-Ⅳ-Ⅵ族化合物半導體之材料特性簡介 11 2-1-1 CZTS(Se)之晶體結構 11 2-1-2 CZTS(Se)之薄膜電性 13 2-1-3 CZTS(Se)之光學特性 15 2-1-4 CZTS(Se)之二次相 16 2-1-5 CZTS(Se)之化學缺陷及缺陷復合體 18 2-2 Ⅰ-Ⅱ-Ⅳ-Ⅵ族化合物半導體薄膜製備方法 21 2-2-1 真空薄膜製程(Vacuum process) 21 2-2-2 非真空薄膜製程(Non-vacuum process) 25 2-3 近期國內外Ⅰ-Ⅱ-Ⅳ-Ⅵ族薄膜太陽能電池之研究成果 35 2-4 影響Ⅰ-Ⅱ-Ⅳ-Ⅵ族太陽能電池轉換效率之因素彙整 39 2-4-1 光伏特效應與半導體物理簡介 39 2-4-2 薄膜太陽能電池之基本架構 41 2-4-3 薄膜太陽能電池之運作原理及公式推導 42 2-4-4 Ⅰ-Ⅱ-Ⅳ-Ⅵ族太陽能電池之Shockley-Queisser理論極限值 45 2-4-5 影響元件轉換效率之因素探討 49 2-5 優化Ⅰ-Ⅱ-Ⅳ-Ⅵ族太陽能電池光電轉換效率之方法 54 2-5-1 陽離子取代法(Cation substitution method) 54 2-5-2 缺陷鈍化(Defect passivations) 59 2-5-3 背電極優化(Modified molybdenum interface) 61 2-6 CdS緩衝層薄膜製備方法 63 2-7 研究目的 65 第三章 研究架構及實驗方法 67 3-1 研究架構 67 3-2 模擬流程及參數設定 69 3-3 實作流程及實驗步驟 71 3-3-1 前驅物的合成步驟 71 3-3-2 奈米粉體的製備流程 74 3-3-3 生胚薄膜的製作方式 76 3-3-4 薄膜的熱處理製程 77 3-3-5 薄膜太陽能電池(TFSC)的製作流程 81 3-4 研究分析方法簡介及理論基礎 83 第四章 以CASTEP進行不同硒取代量之CZTSSe的第一性原理計算與預測 93 4-1 晶胞模型及計算方法的合理性 93 4-2 能帶結構(Band structure) 94 4-3 態密度(Density of states, DOS) 95 4-4 複介電函數(Dielectric function) 98 4-5 光學常數(Optical constant) 99 4-6 吸收係數(Absorption) 101 4-7 反射率(Reflectivity) 102 4-8 複電導率(Conductivity) 103 4-9 損失函數(Loss function) 104 4-10 本章結論 105 第五章 以加壓硒化製程改善CZTS奈米粒子薄膜之微結構及電性並探討其反應機制 106 5-1 合成後之CZTS奈米粉體分析 106 5-2 旋鍍後之CZTS生胚性質 110 5-3 經氮氣常壓RTA製程後之CZTS吸收層分析 112 5-4 加壓硒化製程時間對CZTSSe吸收層的影響 114 5-5 經加壓硒化製程後之CZTSSe吸收層分析 119 5-6 CZTS與CZTSSe吸收層的相互比較 121 5-7 硒化機制的探討-液相輔助晶粒成長 126 5-8 本章結論 141 第六章 加壓預燒結對材料微結構及電性之影響 144 6-1 加壓預燒結溫度對CZTSSe吸收層的影響 144 6-2 兩階段快速熱退火製程對薄膜優選取向的影響 152 6-3 兩階段快速熱退火製程對吸收層的優化成效 160 6-4 本章結論 163 第七章 以銀離子對CZTSSe進行陽離子取代對薄膜微結構及光電特性之影響 165 7-1 模擬不同銀取代量對材料光電性質的影響 166 7-2 合成ACZTS奈米粉體之分析 169 7-3 加壓預燒結後之ACZTS薄膜分析 173 7-4 兩階段快速熱退火製程後之ACZTSSe吸收層分析 174 7-5 CZTSSe與最佳銀取代量之ACZTSSe吸收層的比較 181 7-6 本章結論 184 第八章 總結論與未來展望 186 參考文獻 191

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