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研究生: 陳彥志
Chen, Yen-Chih
論文名稱: 以雷射輔助電漿化學氣相沈積法之矽太陽電池特性研究
Investigation of Silicon Solar Cell using Laser Assisted Plasma Enhanced Chemical Vapor Deposition
指導教授: 李清庭
Lee, Ching-Ting
黃振發
Huang, Jen-Fa
學位類別: 碩士
Master
系所名稱: 理學院 - 光電科學與工程研究所
Institute of Electro-Optical Science and Engineering
論文出版年: 2009
畢業學年度: 97
語文別: 中文
論文頁數: 93
中文關鍵詞: 二氧化碳雷射矽太陽電池電漿化學氣相沉積系統
外文關鍵詞: PECVD, CO2 laser, silicon solar cell
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  • 本研究探討的主題是利用雷射輔助化學氣相沉積系統進行矽薄膜沉積,比較在雷射輔助化學氣相反應下,矽薄膜性質是否有結構上的改變。本研究詳盡地探討在不同雷射功率輔助下,化學氣相沉積系統所沉積的矽薄膜於結晶特性以及鍵結特性上造成的差異,並以穿透式電子顯微鏡,實際觀察到結晶顆粒的存在。最後將沉積的矽薄膜應用到薄膜太陽電池上,最後進行轉換特性比較。

    This research is on the laser assist PECVD deposited silicon film. And the change of silicon film structure was investigated. This research was discussing the crystalline and bond structure affected by different laser power density in detail. And the crystal grain was observed by transmission electron microscope. As to application, the high absorption of amorphous silicon film made itself possible to meet the solar cell demand. On the other side, amorphous silicon would degrade at a longer term luminance. Therefore, the laser assisted PECVD deposited silicon film could supply a better quality of silicon thin film as the active layer to overcome this weakness. The research is toward the goal. And the transformation efficiencies were compared finally.

    目錄 中文摘要.…………………………………………………………… Ⅰ 英文摘要.…………………………………………………………… Ⅱ 致謝.………………………………………………………………… Ⅲ 目錄.………………………………………………………………… Ⅳ 表目錄.……………………………………………………………… Ⅶ 圖目錄.……………………………………………………………… Ⅷ 第一章 導論………………………………………………………… 1 1.1 前言………………………………………………………… 1 1.2 研究動機…………………………………………………… 2 第二章 實驗原理…………………………………………………… 8 2.1 太陽能電池工作原理……………………………………… 8 2.1.1 光電轉換原理……………………………………… 8 2.1.2 等效電路…………………………………………… 10 2.1.3 轉換效率…………………………………………… 12 2.1.4 太陽光譜…………………………………………… 14 2.2 矽薄膜沈積.……….……………………………………… 15 2.2.1 二氧化碳雷射電漿化學氣相沈積系統…………… 15 2.2.2 化學氣相沈積原理 .….…………………………… 16 第三章 量測儀器 .……….………………………………………… 19 3.1 薄膜與表面分析..………………………………………… 19 3.1.1 拉曼光譜分析儀…………………………………… 19 3.1.2 紅外線光譜分析儀………………………………… 19 3.1.3 穿透式電子顯微鏡………………………………… 20 3.1.4 原子力顯微鏡……………………………………… 21 3.1.5 掃描式電子顯微鏡………………………………… 21 3.1.6 轉換效率量測系統………………………………… 22 3.2 元件製程…………………………………………………… 22 3.2.1 結構設計…………………………………………… 22 3.2.2 試片清潔…………………………………………… 23 3.2.3 矽基板表面錐狀蝕刻……………………………… 24 3.2.4 背部電極製作……………………………………… 24 3.2.5 主動層矽薄膜沉積………………………………… 25 3.2.6 n 型矽薄膜沉積 .………………………………… 26 3.2.7 表面電極製作……………………………………… 26 3.2.8 抗反射層沈積……………………………………… 28 第四章 矽薄膜分析與太陽電池元件量測………………………… 30 4.1 拉曼光譜量測……………………………………………… 30 4.2 紅外線光譜量測…………………………………………… 31 4.3 穿透式電子顯微鏡量測…………………………………… 33 4.4 錐狀表面蝕刻量測………………………………………… 34 4.4.1 原子力顯微鏡量測………………………………… 35 4.4.2 掃描式電子顯微鏡量測…………………………… 36 4.5 太陽電池轉換效率量測…………………………………… 38 4.5.1 p-n 結構太陽電池量測.…………………………… 38 4.5.2 p-i-n 結構太陽電池量測.………………………… 39 第五章 結論………………………………………………………… 43

    第一章
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    [9] R. R. Ayra, and D. E. Carlson, “Amorphous Silicon PV Module 7 Manufacturing at BP Solar,” Progress in Photovoltaics, vol. 10, pp.69-76, 2002.
    第二章
    [1] 余合興, “光電子學原理及應用,” 中央圖書出版社, 1987.
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    第三章
    [1] 吳國禎, “分子振動光譜學概論,”高立圖書有限公司, 2001.
    [2] 陳陵援, 吳慧眼, “儀器分析,” 三民書局, 2002.
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    [4] A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, ” Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon,” Phys. Rev. B, vol. 45, pp. 13367–13377, 1992.
    [5] 莊嘉琛,“太陽能工程-太陽電池篇,”全華科技圖書股份有限公司, 2001.
    第四章
    [1] J. M. Seo, M. C. Jeong, and J. M. Myoung, "Effects of hydrogen on poly-and nano-crystallization of a-Si: H prepared by RF magnetron sputtering," J. Cryst. Growth, vol. 295, pp.119-123, 2006.
    [2] S. Guha and J. Yang, Scott J. Jones, Y. Chan and D. L. Williamson,“Effect of microvoids on initial and light-degraded efficiencies of hydrogenated amorphous silicon alloy solar cells,” Appl. Phys. Lett., vol. 61, pp.1444-1446, 1992.
    [3]R. A. Street, “Hydrogenated Amorphous Silicon,” Cambridge University Press, p.79, 1991.

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