摘要
本論文中，我們利用低溫( 550℃)固體源分子束磊晶法(Solid Source Molecular Beam Epitaxy)，成長一系列矽鍺多層高平面通道摻雜P型場效電晶體(Multi-Delta-Doped SiGe Channel p-MESFET)結構，並針對各種結構進行元件製作以及能帶工程理論模擬分析。
我們使用MEDICI二維模擬軟體，模擬不同元件結構的能帶圖與電洞載子分佈圖。在實驗製作方面，我們成功研製出一系列矽鍺多層高平面通道摻雜P型場效電晶體(Multi-Delta-Doped SiGe Channel p-MESFET)。由於結構之優越性，三通道高平面對稱式摻雜場效電晶體(Symmetrical TDFET )具有最高的互導值(17.3 mS/mm)，較大的汲極驅動電流(57 mA/mm)，以及較寬的閘極工作平台(4V)，顯示此結構具有優越之載子侷限能力。此外由於未摻雜層存在於通道與閘極間，因此元件具有高順向開啟電壓(Turn-on Voltage)和反向崩潰電壓(Reverse Breakdown Voltage)。

Abstract
In this thesis, we cooperated with Research Center for Advanced Science and Technology (RCAST), the University of Tokyo. A series of Multi-Delta-Doped SiGe Channel p-MESFET were grown by Solid-Source Molecular Beam Epitaxy (SSMBE) at low temperature (550℃). Delta doping was obtained by evaporating boron from a pure B source in a resistance heated Knudsen cell with the Si and Ge shutters closed.
We adopt 2D MEDICI tool to simulate the energy band diagram and hole concentration distribution. With the results of device simulation, we could obtain a better understanding of device behaviors. A series of Doped SiGe Channel p-MESFETs, including UFET, SDFET, DDFET, and TDFET, were sucessfully fabricated. From the experimental results, Symmetrical TDFET device demonstrates the best DC performances among all structures. The peak gm was 17.3 mS/mm. The maximum value of drain to source saturation current is about 57 mA/mm. A broad linear gm region versus input bias swing was 4 V.

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