本論文主要著重在鎵系列半導體，包含氮化鎵、氧化鎵與氮化銦鎵
之成長，並且研製和分析氮化鎵與氧化鎵系列紫外光檢測器。
首先在在氧化鎵系列紫外光檢測器研製方面，我們使用爐管熱氧化的
方法於氮化鎵磊晶薄膜上成長氧化鎵覆蓋層。藉由加入覆蓋層可以降低
暗電流值達四個數量級、增加21 倍之紫外光與可見光的拒斥比。在5-V
的偏壓下，具有氧化鎵覆蓋層及沒有氧化鎵覆蓋層的光檢測器之檢測度
分別為1.01x1013 and 1.28x109 cmHz0.5W-1。
在氮化鎵/氮化銦鎵量子井光檢測器研製方面，藉由加入氧化鎵覆蓋
層可以降低暗電流值達兩個數量級在5 伏特的偏壓之下，這是由於有較
厚及較高的能障所致。而暗電流值夠更進一步被減少及擁有90 倍之紫外
光與可見光的拒斥比在成長氮化鎵/氮化銦鎵量子井結構之下，這是由於
量子井能夠侷限被較低能量的光子所產生的電子電洞對所產生的結果，
在5 伏特的偏壓之下，光檢測器之雜訊等效功率及檢測度分別為8.4×10-13
W 與7.9×1012 cmHz0.5W-1。
基於上述的結果，氮化鎵/氮化銦鎵量子井光檢測器被覆蓋了金奈米
粒子以進一步地增加效能。在5 伏特的偏壓之下可以降低暗電流值達三
個數量級，在1 伏特的偏壓之下擁有225 倍之(250/375 nm)拒斥比及5
伏特的偏壓之下擁有3.9 倍之紫外光與可見光(375/430 nm)拒斥比在覆蓋
了金奈米粒子之後。此外在波長500 奈米之處會有一個明顯的響應，這
應該是金奈米粒子的表面電漿共振所產生的結果，這些結果顯示利用金
奈米粒子將會有效地改善光電元件的效能。

The main goals of this dissertation are the growth of GaN, Ga2O3
and InGaN and the fabrication and analysis of photodetectors (PDs).
First, we reported the growth of β-Ga2O3 cap layer by furnace
oxidation of GaN epitaxial layer at high temperature in oxygen containing
ambient to the fabrication of the GaN-based PDs. With the β–Ga2O3 cap
layer inserted, it was found that we could reduced reverse leakage current
by more 4 orders of magnitude and increased the UV-to-visible rejection
ratio by 21 times. With a 5-V applied bias, the normalized detectivity
were 1.01x1013 and 1.28x109 cmHz0.5W-1 for the PDs with and without
the β–Ga2O3 cap, respectively.
On the part of InGaN/GaN multi-quantum-well (MQW) PDs with a
β–Ga2O3 cap layer, the reverse leakage current by at least about 2 orders
of magnitude with a 5-V applied bias because it created a thicker and
higher potential barrier with a beta-Ga2O3 cap layer. The reverse leakage current can be further reduced and a 90-fold larger ultraviolet-to-visible
rejection ratio can be achieved by using InGaN/GaN MQW layers, which
confine the electron-hole pairs generated by lower-energy photons. In
addition, the noise level was reduced and detectivity was increased.
With a 5-V applied bias, the noise equivalent power and normalized
detectivity were 8.4×10-13 W and 7.9×1012 cmHz0.5W-1, respectively.
Based on the aforementioned, the InGaN/GaN multi-quantum-well
(MQW) PDs were covered with Au nanoparticles to increase performance.
The reverse leakage current decreased by more than 3 orders of
magnitude with a 5-V applied bias, a 225-fold increase of the rejection
ratio (250/3385 nm) was achieved with a 1-V applied bias and a 3.9-fold
enhancement in rejection ratio (375/430 nm) with a 1-V applied bias
could be achieved after the PDs were covered with Au nanoparticles.
There was an obvious response at 500 nm due to the surface plasmon
resonance in Au nanoparticles. The results indicate that Au nanoparticles
can be used to improve the performance of optoelectronic devices.

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5-2
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