本研究係分別利用分子束磊晶成長氮化鎵量子點，及以化學氣相沉機成長氧化鎵奈米線。氮化鎵量子點部分改變兩組不同的基板表面氮化時間，以製得不同型態之氮化鎵磊晶。結果顯示成長時間的增長會讓表面產生符合S-K成長模式的型態變化，並會增大其島狀物尺寸、密度及表面粗糙度。而隨成長時間持續增加磊晶內部會引入缺陷以舒緩內部應力累積。對於其發光特性，我們發現由2D薄膜轉成3D島狀物會使其發光波長由399 nm轉往387 nm處。
　　對於氧化鎵奈米線部分，我們發現隨溫度升高會提高化學氣相沉機反應中起始成核點的移動能力並促進成核點生成轉化成穩定的核，且因不同溫度下會促進氧化鎵晶體的異向性成長而生成不同型態之一維奈米結構物。而氨氣流量增加會讓其表面形貌漸趨向產生類似鍍膜表面的型態，而其結晶性也逐漸變差，原因是氨氣參與反應的比重會隨流量增加而增加，使得其鍵結型態會由Ga-O逐漸轉向Ga-N的鍵結。最後我們對不同型態之氧化鎵觀察其發光性質，發現氧化鎵的一維奈米結構物有其異於粉體的特性發光波長，推測這些特性波長應與其晶體內部缺陷有所關連。

　　This research deals with the growth of gallium nitride quantum dots by molecular beam Epitaxy (MBE), and gallium oxide nanowires by chemical vapor deposition (CVD). For the former, we studied various surface morphologies of the GaN epitaxial nanostuctures by changing two nitridation times for the buffer layer. The results proved that the quantum dot growth was followed by S-K growth mode. Moreover, the size, density, and roughness of the island structures increased when the growth time increased. However, the defects were introduced to reduce the stress accumulation during the continues growth of epitaxy. The　photoluminescence properties showed the wavelength were shifted from 399 nm to 387 nm when 2D surface transformed to 3D island structure.
　　For the growth of the Ga2O3 nanowires in CVD reaction, we observed the unstable nucleus of initial products would gain more mobility and transformed into stable cores when we raised the growth temperture. Different growth temperatures would promote the anisotropic growth of the Ga2O3 crystals to variant 1-D structures. It could let the surface morphology change to film structure and the crystallinity became worse when the NH3 flow rate increased. The reason is the proportion of the NH3 content increased along with the flow rate, because the bonding type of the products gradually changed from Ga-N to Ga-O bonding. Finally we studied the photoluminescence properties of various 1-D nanostructures. We discovered lights of various wavelengths emitted from 1-D nanostructures with powders, and the reasons are ascribed to the defects of the 1-D nanostuctures.

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