新穎的氮砷化銦鎵材料在光纖通訊應用的領域裡較常見的磷化銦材料系統更有吸引力，特別是具有較大的傳導帶能隙差以及與砷化鎵基板的晶格常數相近。在本論文中，我們對氮砷化銦鎵之有機金屬氣相沉積與其光特性、電特性都有廣泛的探討。其中，在氮溶入砷化銦鎵方面，可藉由降低成長溫度以及銦在化合物中的組成或是提高成長速度以及uDMHy對五族的比例來提高但融入的比例。然而，增加氮的含量卻會使其光特性有很大的劣化，這種劣化可藉由熱處理來改善，但是卻會使得其發光波長變短，降低了氮融入所引致能隙下降的效果。這種變化可歸因於去除氫披覆的效果以及氮鍵結的改變。此外也探討了氮砷化銦鎵的能隙對溫度的穩定性以及氮組成與活化能的關係。在高溶入氮的樣品中可發現到氮群聚的現象，此種現象造成了在光激發螢光光譜中的三重波峰，顯示藉由提高氮含量來降低能隙的不良影響。換言之，最佳的氮砷化銦鎵應用條件應該是在提高發光波長以及加入氮所引發的光特性劣化間做一妥協。最後，所製備氮砷化銦鎵的三重量子井雷射已可成功操作在1200nm的發光波長，且其臨限電流密度為600A/cm2。

　　The novel dilute nitride GaInNAs alloys have several advantages over conventional InP material such as large conduction band offset and lattice matched to GaAs substrate ,which are great attractive in the application of optical communication. In this thesis, we investigated GaInNAs extensively from the MOVPE growth, to the optical-electrical properties. The nitrogen content can be increased by lowering growth temperature and indium composition, increasing growth rate and the uDMHy to Group V ratio. However, the increased nitrogen incorporation could lead to the inferior optical properties, but these degraded properties can be improved by thermal treatment at the cost of blue-shift in emission wavelength. The changes of GaInNAs PL spectra caused by annealing are ascribed to the local N environment transformation and removal of hydrogen passivation. Besides, the temperature stability of GaInNAs bandgap and its activation energy are also investigated. The nitrogen clustering causes the triple-peak spectrum observed in PL spectrum implies the disadvantage of bandgap reduction using high nitrogen content. In other words, the optimized condition for GaInNAs to emit at 1300nm should be a compromise between emission wavelength and optical properties induced by nitrogenincorporation. Finally, 1200nm pulse operating was successfully achieved by GaInNAs TQW BA laser which had a threshold current of 600A/cm2.

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