本論文探討脈衝電位技術於陽極氧化鋁製程的變異分析，討論脈衝
電壓對孔徑大小、氧化層厚度和孔洞數的影響。不同於一般的直流電壓製程，脈衝電壓在實驗中顯示可以避免焦耳熱效應累積，有較均勻的表面多孔層，並且可在低純度鋁上製作出規則排列的結構。在高純度鋁基材上分別使用脈衝電壓和直流電壓在室溫20 ℃下完成氧化鋁模板，結果顯示在脈衝電壓下鋁基材的表面有較完整和孔洞較佳的均勻性接著在使用低純度鋁在不同的室溫下以直流電壓和脈衝電壓討論溫度的影響，直流電壓在高於25 ℃於低純度鋁上將失效，而脈衝電壓則在室溫30 ℃仍然可以維持奈米孔洞陣列的結構，顯示脈衝對焦耳熱產生的抑制效果。在室溫20 ℃下我們討論脈衝的兩種不同模式正脈衝和正負脈衝，並加入直流電壓討論結果以正負脈衝的效果最佳。脈衝電壓為一新穎且帶來有效率、低成本的一種方式應用陽極氧化鋁製程，以草酸濃度和脈衝電壓在脈衝製程對氧化鋁模板結構的影響在這裡已經被討論。濃度的提高可以輔助脈衝製程有更加的孔洞陣列，但隨著電壓上升，電場輔助溶解的焦耳熱就會明顯的增加。以田口實驗分析的方式讓我們更進一步了解脈衝特性應用於不同需求的陽極氧化鋁結構,並以定量的方式以四種參數:脈衝電壓週期、電壓責任週期時間、脈衝電壓與草酸濃度去分析對孔徑大小、多孔層厚度和孔洞數的影響。

Abstract
This thesis focus on the parameter variations of anodic alumina oxide (AAO) process by applying pulse voltage. The effects of pore diameter, layer thickness and number of pores were further discussed. The main contribution is that pulse voltage suppresses the joule heat generation in the interface between alumina substrate and oxide layer. Moreover, highly ordered nano-structure can be obtained by means of low purity alumina foils.
The successful AAO template on high purity alumina substrate (99.997%) at room temperature (20 ℃) were both obtained by DC and pulse mode. It shows that pulse mode has more uniform pore array the DC one. And then, we use pulse and DC voltage on low purity alumina (99%) at different room temperature (20 ℃~30 ℃). The results show the ability of joule heat suppression in pulse mode and obtains the successful AAO template in high temperature (30 ℃) environment, but valid AAO template in DC mode. In pulse voltage, there are two different modes: positive pulse voltage and positive / negative mixed pulse voltage, we demonstrate the individual characteristics among them.
Pulse AAO method is a novel technique in anodization and brings more convenience and low cost way than usual. The effect of oxalic acid concentration and pulse voltage in anodization process were also discussed in this paper. Finally, we using taguchi method to analyze the affection of parameters in anodization process.

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