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研究生： 楊崴翔
Yang, Wei-Siang
論文名稱： 利用電漿輔助化學氣相沉積法成長氮化銦鎵與P型氮化鎵應用於發光二極體之研究
Growths of InGaN and P-type GaN by Plasma-Enhanced Chemical Vapor Deposition for GaN Light Emitting Diode Applications
指導教授： 洪昭南
Hong, Chau-Nan Franklin
學位類別： 碩士
Master
系所名稱： 工學院 - 化學工程學系
Department of Chemical Engineering
論文出版年： 2014
畢業學年度： 102
語文別： 中文
論文頁數： 130
中文關鍵詞： 電漿輔助化學氣相沉積法 、奈米柱 、氮化鎵 、氮化銦鎵 、氮化鎂 、p−n接面 、電致發光 、單一量子井 、發光二極體
外文關鍵詞： PECVD, GaN, nanowires, InGaN, LEDs
相關次數： 點閱：79  下載：1 
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    • 由於氮化鎵具有極佳之光電特性，常用以製作發光二極體、雷射二極體、太陽能電池、光感測元件、高功率電晶體以及高載子遷移率電晶體。一維奈米結構具有高比表面積與低缺陷濃度之特性，已廣泛地應用於各種光電元件之製作。本研究將結合氮化鎵與一維奈米結構之優勢，以本實驗室自行開發之爐管型電漿輔助化學氣相沉積設備，成長一維氮化鎵奈米結構。我們以自組裝之成長機制來成長氮化鎵晶體，並以鎵金屬與氮氣作為氮化鎵之前驅物。
    本研究成功在n+ Si基板上成長出垂直於基板表面之高光學特性氮化鎵奈米柱。另外，以氮化鎂(Mg3N2)粉末作為摻雜物質，以成長出p-n接面氮化鎵奈米柱，並藉由氮化鎂來源溫度的控制來改變鎂的摻雜量，以期能成長出最高電洞濃度的P型氮化鎵晶體。我們也製作出p-n接面氮化鎵奈米柱元件來量測電性，結果是元件有整流曲線特性，但遺憾的是未能觀測到光輻射出現，分析可能原因有三種，一是提供的電流密度不夠高；二是因奈米線的比表面積高，表面存在許多懸鍵，形成表面缺陷能階，導致非輻射複合機率增加；三是電子溢流，導致內部量子效率變低。為了配合發光層的製作，我們也嘗試降低成長P型氮化鎵的基板溫度，以避免氮化銦鎵晶體的熱裂解，結果顯示高溫成長出的p-n接面氮化鎵奈米柱為軸向結構，但低溫成長出的p-n接面氮化鎵奈米柱則為核殼結構，且低溫成長p型氮化鎵會使晶體品質變差。
    我們的發光層是成長單層氮化銦鎵晶體在氮化鎵奈米柱上，結果顯示我們成長出的氮化銦鎵晶體組成約為In0.12Ga0.88N，假如以此作為發光層，發出的光波段會落在紫光區(407 nm)，，但作為發光層需有高晶體品質特性，所以我們之後需提升晶體品質，讓PL光譜不再有黃光缺陷發光出現，造成晶體品質降低的原因應是III/V比不足所造成，改善後以期能獲得更高效率的輻射發光。

    This article describes the growths of vertically aligned p-n junction GaN nanowires and InGaN/GaN nanowires on Si (100) substrates grown by plasma-enhanced chemical vapor deposition technique. The resultant p-n junction nanowires have an axial structure when the growth temperature of p-type GaN is 950℃. However, the p-n junction nanowires become a core-shell structure when the growth temperature of p-type GaN is 830℃. The current-voltage characteristics of these nanowires shows that the resistance of device is very high. The reason may be the nanowires with high resistance or the residual insulating layer between electrodes and nanowires. There are three potential reason which block the radiation of the device. First, the current density is too low to excite enough light intensity. Second, the high surface-to-volume ratio of nanowires induces Shockley-Read-Hall recombination. It reduces the internal quantum efficiency of the LED device. Final, without the existence of active layer, electron overflow also reduces the internal quantum efficiency of the LED device. The InGaN/GaN nanowires have a core-shell structure and the composition of InGaN is In0.12Ga0.88N. The emitting light locates in the purple light region by photoluminescence.

    目錄 中文摘要 I 英文延伸摘要 III 誌謝 X 目錄 XI 表目錄 XV 圖目錄 XVI 第一章 緒論 1 1-1 前言 1 1-2 奈米材料的發展現狀 3 1-3 發光二極體 4 1-4 研究動機 6 第二章 理論基礎與文獻回顧 9 2-1 氮化鎵之結構與特性 9 2-1-1 氮化鎵之基本性質 10 2-1-2 成長氮化鎵之基板 10 2-1-3 n型氮化鎵 12 2-1-4 p型氮化鎵 14 2-2 氮化銦鎵之基本性質 16 2-3 一維氮化鎵奈米結構之成長 19 2-3-1 觸媒輔助成長法 20 2-3-2 自組裝成長氮化鎵奈米柱 24 2-4 p-n接面 25 2-4-1 雙異質接面 27 2-5 電漿理論 28 2-5-1 電漿定義與特性 28 2-5-2 電介質放電 33 第三章 實驗步驟與方法 48 3-1 實驗流程 48 3-2 實驗設備 49 3-2-1 爐管型電漿輔助化學氣相沉積系統 49 3-2-2 三段加熱區間高溫爐 49 3-2-3 石英管反應腔體 50 3-2-4 氧化鋁材料 50 3-2-5 電漿電源供應器 51 3-2-6 抽氣及真空系統 51 3-2-7 壓力監控系統 51 3-2-8 流量控制系統 51 3-3 實驗材料 51 3-3-1 實驗氣體 51 3-3-2 基板材料 52 3-3-3 真空管件材料 52 3-3-4 化學藥品 52 3-4 實驗步驟 53 3-4-1 氮化鎵奈米柱的製備 53 3-4-2 P型氮化鎵層的製備 54 3-4-3 氮化銦鎵層的製備 55 3-4-4 氮化鎵二極體元件製作 57 3-5 實驗分析 57 3-5-1 高解析熱場發射掃描式電子顯微鏡 57 3-5-2 多功能X光薄膜繞射儀 59 3-5-3 光致螢光光譜儀 59 3-5-4 電子束蒸鍍機 60 3-5-5 電性量測系統 61 第四章 結果與討論 64 4-1 高品質氮化鎵奈米柱的製備 64 4-2 高品質P型氮化鎵層的製備 67 4-2-1 改變鎂來源區溫度 68 4-2-2 改變基板區溫度 72 4-2-3 解決P型氮化鎵內縮成長問題 75 4-3 製作p-n接面氮化鎵奈米柱二極體元件 83 4-3-1 絕緣層的選擇與製作 83 4-3-2 p-n接面氮化鎵奈米柱二極體元件之電性量測 85 4-4 氮化銦鎵層的製備 87 第五章 結論與未來展望 112 5-1 結論 112 5-2 未來展望 114 第六章 參考文獻 116

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