本研究以固態熔融反應輔以助熔劑長晶法合成出具新穎團簇結構的硫氧族化合物Ba-A-Ga-S-O, A = K (1), A = Cs(2)。 Ba-A-Ga-S-O, A = K (1), A = Cs(2) 晶體之空間群(space group)及晶系(crystal system)為Hexagonal P6 ̅2m，屬於非對稱中心結構(noncentro-symmetric)金屬硫氧族化合物，單位晶格軸長分別為a = 16.9125(9) Å, c = 9.1109(0) Å。結構骨架是由GaO4 與GaSO3 四面體以共用角方式相互鍵結，形成[Ga6S3O13] 與[Ga6S3O19] 兩種巨大三角形團簇(cluster)。此系統通光範圍約為2.5 μm – 12.5 μm，在紅外光區有良好的穿透度，能隙測得皆達3.87 eV以上，可能代表高的光破壞閥值，應用在高功率的雷射光源上較不易損壞。在螢光性質部分，室溫情況下以激發光波長325 nm 照射放出黃綠光，其高能隙及放光性質有潛力可應用在LED及其他光感測設備上。

Two oxychalcogenides Ba3Ga6AxS2O10.0 (A=K, x=0.05, A=Cs, x=0.24) was prepared by the KBr/CsI flux at high temperature. Both compounds crystallize in the same space group of P6 ̅2m with parameters a = 16.9 Å and c = 9.1 Å. The structure adopts a new three-dimensional framework which is composed of two kinds of triangle cluster Ga6S3O13 and Ga6S3O19 with A+ cations filling in the space. The compounds feature wide band gaps of 3.87 and 3.90 eV. and good photoluminescence (PL) behaviors emitted in green light.
In order to the mix-anions framework, These two oxychalcogenides has distorted clusters with wide band gap and high intensity yellow-green luminescence. The advantage of the wide band gap mean that this compound has the potential application as nonlinear optical (NLO) materials and semiconductors. In addition, the PL properties of two compounds are investigated at room temperature exhibits a strong yellow-green emission band at 540 nm under excitation wavelength of 325 nm. It is similar to Ga2O3, and Ga2S3 and has the potential application in gas sensors and photodetector.

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