InGaZnO(IGZO)非晶相氧化物半導體(AOS)是近年來備受關注的半導體材料之一，能在室溫沈積條件下，仍然擁有高於10 cm2V-1s-1的電子遷移率，極適合在低溫程序下進行高效能電子元件的研製。至今IGZO在穩定性方面仍有可靠度問題，因此鍍膜材料本質與元件界面機制的探討是IGZO可靠度研究的關鍵。本研究以薄膜基礎特性為基礎，進而製作元件探討界面結構與電性關係。實驗中選擇兩種不同組成(In:Ga:Zn:O原子比1114與2217)的IGZO系統，除解析組織結構特性之外，並論述其光電特性及主要界面機制。部份實驗選擇 1114系統為實驗材料，並設計製作成TFT元件，量測其通電特性與元件IGZO界面穩定度關係和通電誘發界面變態特性。
實驗結果顯示IGZO薄膜電阻隨著通氧量增加而增加。退火處理對薄膜電阻的影響大過通氧條件。退火溫度越高電阻則越低，當溫度高過250°C時變化則趨緩，且膜基地組成與縱深分佈具穩定化。此外，IGZO2217薄膜電阻低於IGZO1114。實際元件量測下，TFT元件特性受IGZO基地組成差異影響極大。若Zn元素缺乏，導致ZnO體積率降低，並造成載子遷移受到影響而大幅降低元件特性。退火製程能激發IGZO(1114; 2217)拉曼位移峰CH(466)。IGZO2217的In2O3-Ga2O3鍵結較強，使得CH峰值強度高於IGZO1114。In/IGZO薄膜基地在通電條件下，界面與基地促進擴散與再結晶進而明顯改善電性。

InGaZnO amorphous oxide semiconductor (AOS) is one of the most attention-getting materials in last years. IGZO has a good carrier mobility more than 10 cm2V-1s-1, even was deposited at room temperature; therefore it can be apply in the high-efficiency electronic devices and manufacture by low-temperature processes. However, there are still some reliability problems in the IGZO systems. The material basic properties and the device interface-effect mechanism are the keys to solve the problems. This present research is based on the film properties, and then produces devices to discuss the relationship between the interface structures and its electric resistance. It not only analysis material organization and structural characteristics, but also reports optoelectronic characteristics and the main interface mechanism of film by choosing IGZO system with different compositions (atom ratio: 1114 and 2217). Parts of the experiment choose 1114 system as the channel material of TFT devices, and then measure its electrifying properties and the relationship of IGZO interface structure in the device, finally then discuss the interface phase transformation characteristics was induced by electrical current testing.
Results of the experiments show the film resistance of IGZO increase with increasing the flow rate of depositing oxygen. There is a greater influence in annealing conditions than depositing oxygen flow rate. The higher annealing temperature has the lower film resistance. However the variation becomes smaller while the annealing temperature over 250 oC, and the film basic composition and the depth distribution become stable. Besides, the film resistance of IGZO2217 is lower than that of IGZO1114. It was found that the IGZO compositions influence the TFT device characteristics seriously after actually measuring. While lacks Zn element of IGZO, the ZnO volume ratio decreases. This affects the carrier mobility due to the decay of the device characteristics seriously. The annealing process can induce the Raman shift peak CH (466). A stronger In2O3-Ga2O3 bond of IGZO2217 for CH peak value is greater than IGZO1114. The interfaces and matrix of In/IGZO film possess a phase transformation after electrical current testing. The transformation improves the resistance of IGZO films.

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