由於電阻式記憶體具有非揮發特性、MIM結構簡單、低功耗、製程微縮化能力高等特點，這種獨特的元件具有強大的潛力，成為未來非揮發性存儲器的主要候選者之一。 且其相對簡單的結構也方便地使其能夠與包括光學盤形共振器在內的其他元件整合在一起。並聯式雙盤耦合共振器在波長選擇性和可調諧性方面具有額外的優勢，使其在光子集成電路中得到廣泛討論和實施。
在Al/BaTiO3/ITO研究中，比較不同鈦酸鋇膜厚的電阻式記憶體特性，在Al/BaTiO3(60nm)/ITO有較多切換次數425次、 SET電壓為-0.69V、RESET電壓為0.475V、開關比為100以及阻態維持時間超過10000秒。
此論文將Al/BaTiO3(60nm)/ITO低切換電壓和低功耗的電阻式記憶體，整合到並聯式雙盤耦合共振器上。在雙盤間距15 μm時，電阻式記憶體調變雙盤耦合共振器的相位，從光輸出的Through port與Drop port呈現相位反轉。當雙盤間距減少到10 μm與5 μm的一系列量測特性中，也可以看到預期，電阻式記憶體調變共振器，使Through port與Drop port相位反轉，還可以改善原先共振器的效果。

Due to the non-volatile characteristics, simple MIM structure, low power consumption, and high process miniaturization capabilities of the resistive random access memory (ReRAM), this unique device has a strong potential to emerge as one of the leading candidates for future non-volatile memories. Furthermore, its relatively simple structure also conveniently allows it to be integrated with other device components including optical disk resonators. Parallel double disk-coupled resonators could have additional leverages in terms of wavelength selectivity and tunability when compared with a single disk resonator, making it widely discussed and implemented in photonic integrated circuits.
With the memory devices based on the Al/BaTiO3 (BTO)/ITO structure fabricated at hand, by cross analyzing the resistive memory characteristics in terms of various barium titanate (BTO) film thicknesses, it is found that the device with 60 nm thick BTO can switch more than 425 times, while the corresponding SET/RESET voltage, the on-off ratio, and the retention time are -0.69V/0.475V, 100, and more than 10000 seconds, respectively.
The present work focuses on Al/BaTiO3(60nm)/ITO resistive memory having a low switching voltage and a low power consumption integrated with a parallel double disk-coupled resonator. When the double disk separation gap is set at 15 μm, ReRAM-mediated double disk resonators could render a phase reversal between the light outputs coming off from the through-port and drop-port. If the gap is shortened to 10 and 5 μm, the expected phase reversal coupled with an improved performance delivered by the ReRAM-mediated resonators are also witnessed in a series of characterization measurements.

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