在此篇碩論中，以氧化銦及氧化鋯兩種靶材共同濺鍍，研製出以氧化銦鋯為主動層之薄膜電晶體及紫外光電晶體。將濺鍍完成的薄膜以X-ray diffraction 及Atomic Force Microscope 加以分析，得知我們的薄膜表面平整性高且呈現多晶相結構，利於電晶體載子遷移率的提升。紫外光檢測器的部分，我們先在玻璃基板上鍍上氧化銦鋯薄膜，並使用鉑作為歐姆接觸電極。我們發現能夠以調變薄膜中氧化銦靶材的濺鍍功率，進而改變光檢測器分別所能吸收到的光截止波長及光響應強度。
碩論的第二部分，著重在氧化銦鋯薄膜電晶體的分析。我們調變其中氧化銦靶材的濺鍍功率而改變其在薄膜中所占的含量，進而做出Sample A–I 等9種試片，分析得到Sample F擁有最好特性。其次臨界擺幅為0.43 (V/decade)、場效載子遷移率為50.78 (cm2V−1s−1)而電流開關比達到9.98×105。紫外光電晶體的部分，利用250-Watt Xenon lamp照射光波長230–500 nm，隨著薄膜中氧化銦含量上升，截止波長由310 nm上升到340 nm，其中Sample F的光響應及拒斥比分別為1.05 (A/W)及2.2×104。
最後，我們研製了雙主動層通道的薄膜電晶體，利用上述Sample C作為Front channel，Sample D–F作為Back channel，得到全新的Sample J、K、L。其中Sample L展現最佳的電特性，次臨界擺幅降低至0.33 (V/decade)、場效載子遷移率和電流開關比提高到58.16 (cm2V−1s−1)及3.02×106。紫外光電晶體的部分，截止波長上升至325 nm–360 nm，光響應和拒斥比則為1.73 (A/W)及3.2×102。

In my experiment, I use the both targets of indium oxide and zirconium dioxide to co-sputter to fabricate the In-Zr-O thin film transistors and UV phototransistors. The In-Zr-O thin film is analyzed by X-ray diffraction and atomic force microscope and we found that it is crystalline structure and has smooth surface which are beneficial to enhance the TFTs’ characteristics. And then, the In-Zr-O MSM UV photodetectors with Pt ohmic contact electrodes are realized. It is found that changing the RF sputtering power for indium oxide target will transform the cut off wavelength and conductivity of the photodetectors.
Next, it will focus on the investigation of the In-Zr-O thin film transistors. We change the content of In2O3 in the thin film in order to fabricate Sample A to Sample I and it is found that Sample F owns good electrical property with SS of 0.43 (V/decade), μFE of 50.78 (cm2V−1s−1) and Ion/off of 9.98×105. Furthermore, using 250-Watt Xenon lamp to emit 230–500 nm light will modulate the cut off wavelength of the UV phototransistors from 310 nm to 340 nm as the content of In2O3 is rising. The photoresponsivity and UV-to-visible rejection ratio of the phototransistors for Sample F are 1.05 (A/W) and 2.2×104.
Finally, we fabricate bilayer In-Zr-O thin film transistors with double channel which is composed of Sample C as front channel and Sample D–F as back channel and we call them Sample J, K and L. Sample L shows better property with SS of 0.33 (V/decade), μFE of 58.16 (cm2V−1s−1) and Ion/off of 3.02×106. Compared with the TFTs with single layer structure, the physical characteristics of the TFTs with bilayer structure is enhanced. The cut off wavelength of the UV phototransistors rises to 325 nm–360 nm and the photoresponsivity and UV-to-visible rejection ratio of Sample L are 1.73 (A/W) and 3.2×102.

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