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研究生： 羅力友
Ro, Li-Yu
論文名稱： 背散射電子繞射分析技術: 殘留應變與差排密度之量測
Electron Backscatter Diffraction (EBSD) Analysis Techniques: Residual Strain and Dislocation Density Measurement
指導教授： 郭瑞昭
Kuo, Jui-Chao
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學及工程學系
Department of Materials Science and Engineering
論文出版年： 2010
畢業學年度： 98
語文別： 中文
論文頁數： 91
中文關鍵詞： 背散射電子繞射 、菊池線圖 、晶軸 、殘留應變 、差排密度 、晶體取向
外文關鍵詞： EBSD, Kikuchi pattern, zone axis, residual strain, dislocation density, crystal orientation
相關次數： 點閱：101  下載：16 
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    • 本研究為國內首次以EBSD分析技術殘留應變與差排密度及建立二維分佈圖形。研究主軸分為兩部份：第一，利用數位影像相關法(DIC, digital imagine correlation)及EBSD技術獲得二維殘留應變分佈圖。第二，結合臨界應力法(critical stress analysis)以及EBSD獲得二維差排密度分佈。
    以單晶矽基板氮化鋁鍍膜，單晶鋁及單晶銅為分析材料，進行壓印實驗，之後分析壓印後所產生的二維殘留應變與差排密度分佈。單晶矽基板氮化鋁鍍膜產生殘留應變值最大伸張應變(tensile strain)約為0.02；單晶鋁壓印10g負重產生殘留應變最大值約為0.012，累積的總差排密度最大值約 m-2 。單晶銅奈米壓印5g負重產生殘留應變最大值約0.041，累積的總差排密度最大值約 m-2。單晶銅以10g奈米壓印產生殘留應變最大值約0.087，累積的總差排密度最大值約 m-2。本研究已經成功以2D殘留應變及差排密度運用於分析壓印附近的應變及差排密度之分佈。

    It’s the first time in Taiwan using EBSD (electron back-scattering diffraction) techniques to analyze two dimensional distributions of residual strain and dislocation density. This thesis has two parts: firstly, using DIC (digital image correlation) and EBSD to measure two dimensional distribution of residual strain; secondarily, combining critical stress analysis and EBSD technique to calculate two dimensional distribution of dislocation density.
    Single aluminum, single copper and alumni nitride thin film on single silicon substance were chosen as experimental materials and performed using indentation testing. The maximum of residual tensile strain in the vicinity of the indentation tip is 0.02 for AlN/Si. The maximum value of residual strain and total dislocation density for 10g-indented single Al are 0.012 and m-2, respectively. In the case of single Cu using 5g nano-indentation, the maximum residual and total dislocation density are 0.041 and m-2, respectively. The maximum residual and total dislocation density are 0.087 and m-2 for single Cu loaded by 10g nano-indentation, respectively.

    摘要......................................................I Abstract.................................................II 總目錄...................................................III 圖目錄....................................................VI 表目錄....................................................XI 第一章 前言.................................................1 1.1 研究動機與背景..........................................1 1.2 研究目的................................................2 第二章 文獻回顧與相關理論.....................................4 2.1 背向電子散射繞射文獻回顧與原理............................4 2.2 數位影像偵測殘留應變文獻回顧與計算原理.....................8 2.2.1 殘留應變文獻回顧.......................................8 2.2.2 以EBSD量測變形矩陣之原理...............................9 2.3 差排密度文獻回顧與計算原理...............................15 2.3.1 差排密度文獻回顧......................................15 2.3.2 以EBSD量測差排張量...................................17 第三章　實驗材料與步驟......................................26 3.1 試片準備...............................................26 3.1.1 單晶鋁試片製備.......................................26 3.1.2 奈米壓印單晶銅試片製備................................28 3.2 實驗步驟...............................................30 3.2.1 殘留應變分佈分析......................................30 3.2.2 差排密度分佈分析......................................36 第四章　實驗結果............................................38 4.1 殘留應變分析...........................................38 4.1.1 單晶鋁應變張量分佈....................................38 4.1.2 單晶銅應變張量分佈....................................42 4.2 差排密度分析...........................................46 4.2.1 單晶鋁差排密度分析....................................46 4.2.2 單晶銅差排密度分析....................................50 第五章　討論...............................................55 5.1 殘留應變驗證討論........................................55 5.2 探討殘留應變與晶軸位移之關係.............................60 5.2.1 AlN鍍膜殘留應變形態與晶軸位移之關係.....................60 5.2.2 理想應變與晶體取向之關係...............................64 5.3 差排密度計算原理討論....................................69 5.3.1 影像品質對差排密度計算討論.............................69 5.3.2 最小能量法總差排密度分佈討論...........................70 5.4 壓印過程中之異向性討論..................................76 5.4.1 Misorientation分佈與殘留應變張量分佈之關係.............76 5.4.2 Misorientation分佈與差排密度分佈之關係.................77 5.4.3 殘留應變分佈與差排密度分佈之關係........................79 第六章 結論................................................83 附錄A 立方晶體系統異向性普松比值.............................85 參考文獻...................................................88

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