本論文將鈦酸鋇電阻式記憶體與環形共振器作垂直式整合，設計具有電阻式記憶體讀寫、光波讀取之新式光學記憶體，並做可行性分析。由於電阻式記憶體(ReRAM)具有結構簡單、製程微縮限制較小、讀寫速度比現有Flash記憶體至少快上103倍等優點，在學術界被廣泛研究，有機會成為下世代非揮發性記憶體，結構簡單相當適合與其他元件做整合。至於環形共振器(Microdisk resonator)，其優勢則是有波長選擇的特性且其製程技術也相當成熟，在積體電路中扮演了一個舉足輕重的腳色！
本論文在研究的過程中主要研究了鈦酸鋇靶材製作與鈦酸鋇電阻式記憶體，最後將電阻式記體垂直整合於耦合環形共振器元件。量測方面利用邊射型(end-fire coupling)將可調變式雷射光源(tunable laser)耦合至元件中，在光纖通訊波長1530 nm到1560 nm的範圍之間探討在ReRAM高低阻態不同的情況下其穿透頻譜研究元件之光學特性。
利用光讀取訊號，藉由共振器through port端的振幅值可判斷ReRAM燈絲是否成功建立，而Drop port端的振幅則可區分高低阻態的不同。此實驗所設計的新式光學記憶體，除了原本的ReRAM能夠進行0與1的儲存單元之外，還能利用上述的頻譜特性在不同阻態下的變化，進行更複雜的邏輯運算，發展的可行性相當高。

The plausibility of vertically integrating the BaTiO3 resistive random-access memory (ReRAM) with the microdisk optical resonator is duly investigated. ReRAM has been extensively examined by its great deal of merits, including an uncomplicated structure, a less restriction in the miniaturization process, and an expeditious read/write mechanism which is 103 faster than conventional flash memory. It has emerged as one of the leading candidates at the forefront of the next-generation non-volatile memory. On the other hand, the microdisk resonator has distinguished itself as a wavelength selective switch, which is also one of the critical devices needed for the optoelectronic integrated circuits.
The preparation of the BaTiO3 target, the BaTiO3 ReRAM, and the fabrication of the ReRAM-vertically-coupled microdisk resonator are mainly discussed in this thesis. For measurement, a tunable laser is coupled to the device by end-fire coupling. The different spectral characteristics corresponding to the high resistance and the low resistance states of the ReRAM at both the through and drop ports are analyzed within the telecommunication C band (between 1530 and 1560 nm). It is found that the formation of the conductive filament could be identified based on the spectral amplitudes corresponding to the two resistance states obtained from the through-port of the resonator. Moreover, the spectral information gathered from the drop port of the resonator could be used to discern the two different memory states.
The newly designed optical memory has a promising future. Not only could it store memory, but much-complicated logic calculations could also be performed based on the manipulation of the different resistance states with the associated spectral characteristics.

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