本論文為成長在非極性氮化鎵銦/氮化鎵之材料之光電元件極化光放射與吸收非等向光學特性之探討，利用極化光光功率偵測系統與極化光電激發光光譜量測系統(polarized electroluminescence)，來研究成長在極性與非極性平面之發光二極體之正向發光與側向發光的極化光偏振性質 ; 在吸收方面，則利用極化光光響應量測系統來研究成長在極性與非極性平面之光偵測元件之正向吸收的極化光光響應特性。由極化光放射、吸收量測系統之量測結果可知，成長在極性平面的氮化鎵銦/氮化鎵材料之側向發光、成長在非極性平面的氮化鎵銦/氮化鎵材料之正向發光與正向吸收，其具有極化光的放射與吸收之光學非等向特性。此外，可藉由非等向性應力的調變與結構設計使得元件具有顯著的極化光放射與吸收之特性。

This thesis aims at the research and fabrication of optical polarization anisotropy characteristics of light emission and absorption of optoelectronic devices fabricated on nonpolar A-plane InGaN/GaN materials. The optical polarization of light emission from the top surface and sidewall of the A- and C-plane InGaN/GaN multiple-quantum-well light-emitting diodes were investigated by measurement of polarized light power detection system and polarized electroluminescence. For the polarization of light absorption of photodetectors, the optical polarization of light absorption from the top surface of the polar C-plane and nonpolar A-plane GaN photodetectors were investigated by measurement of the responsivities for polarization detection system. The measurement of polarized light emission and absorption detection systems showed the optical polarization anisotropy characteristics of light emission from sidewall of the polar C-plane and nonpolar A-plane InGaN/GaN multiple-quantum-well light-emitting diodes, and light absorption from the top surface of the nonpolar A-plane GaN photodetectors. Furthermore, the polarization anisotropy characteristics of light emission and absorption can be enhanced by the modification of anisotropic strain and the device structure design.

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