本研究利用氮化鋁(AlN)結合微波電漿化學沉積法成長的鑽石薄膜做出微機電共振器的懸臂樑結構，懸臂樑為鉬-氮化鋁-鉬-鑽石薄膜結構，並利用化學惰性很高的鑽石薄膜特性，使得可以在定義完鑽石薄膜圖形之後，就讓懸臂樑懸浮，這種自動對準的設計簡化了很多黃光或蝕刻步驟，藉此減少時間以及對元件的汙染。
利用X光繞射分析儀(XRD)、掃描式電子顯微鏡(SEM)和壓電力顯微鏡(PFM)檢驗與分析經由射頻濺鍍系統沉積的氮化鋁薄膜，經過這些儀器進行的材料分析可以得知薄膜的方向性、壓電係數、厚度與側面結構圖。論文中透過一系列的實驗得到在低壓、適當的濺鍍瓦數與溫度下最佳化的(002)方向性氮化鋁。此外，也對於有助於沉積氮化鋁薄膜的鉬金屬下電極優化過。
在鑽石薄膜與鉬金屬下電極上沉積的氮化鋁薄膜得到4.25pm/V 的壓電係數。另外，也由實驗結果可以證實與楊式係數高的鑽石薄膜結合應用的氮化鋁懸臂樑元件的共振頻率獲得提升，而在本研究中最高的共振頻率為80um 長的225k Hz。

In this thesis, the MEMS resonators of aluminum nitride (AlN) piezoelectric cantilever beams have been successfully demonstrated and fabricated with diamond films which are deposited by microwave plasma chemical vapor deposition system (MPCVD). With the chemical inertness of the diamond film helps the release process for the fabrication of the Mo/AlN/Mo/diamond cantilever beam structures. A self-aligned process has been designed to avoid the lithographic misalignment and possible damages to the AlN film by the inductively coupled plasma process.
AlN thin films are deposited by RF magnetron sputtering system and characterized by means of X-Ray Diffractomer (XRD), Scanning Electron Microscope (SEM) and Piezoresponse Force Microscope (PFM) for investigating the orientation, cross-sectional structure, thickness, and the piezoelectric coefficient. Results show that at the sputtering pressure of 1.7X10-3 Torr, and optimized sputtering power, deposition temperature and N2/Ar flow ratio (002) AlN can be deposited. In addition, the molybdenum film which is characteristic of small lattice mismatch with AlN and small coefficient of thermal expansion is also optimized to grow AlN.
The piezoelectric coefficient of AlN on Mo coated diamond is 4.25pm/V. The high Young’s Modulus of diamond film improves the resonant frequency of AlN cantilever beams. The highest resonant frequency of 225k Hz is measured for the cantilever beam of 80um long and 40um wide.

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