本研究使用液相沉積法於矽晶片上沉積二氧化鋯薄膜。利用硫酸鋯於水溶液中水解機制與控制過硫酸銨濃度，在矽晶片上形成連續薄膜。研究中以感應耦合電漿原子放射光譜、掃描式電子顯微鏡、熱分析儀、傅立葉轉換紅外線光譜儀、X光薄膜繞射儀以及穿透式電子顯微鏡來分析薄膜之特性。電性方面，使用Picoampere meter(HP 4140B)量測 J-V 曲線，而 C-F 曲線則使用LCR meter(HP 4284)進行量測。

　　成份分析顯示初鍍膜是由9ZrO2•2SO3•9H2O(s)所組成。傅立葉轉換紅外線光譜儀以及熱分析結果顯示，吸附於初鍍膜上之NH4+鍵結於500℃時會被移除，介穩之SO2-OH與SO3-H2O鍵結則是於750℃時會消失。初鍍膜經熱處理後，熱處理溫度在500~600℃時可得到介穩之正方相二氧化鋯薄膜，熱處理溫度為650~750℃可觀察到正方相與單斜相二相共存。穿透式電子顯微鏡結果也顯示600℃時介穩正方相二氧化鋯薄膜之結晶大小為11nm。

　　薄膜沉積速率研究發現，薄膜厚度會隨沉積時間呈線性增加，10小時後薄膜厚度便無明顯改變。薄膜的成長速率則是會隨過硫酸根濃度的增加而降低，當過硫酸根濃度為0.02M時成長速率降至9.29 nmh-1。C-F與J-V曲線得到在450、600、750℃熱處理溫度下薄膜之介電常數為5.6、6.5、6.7，在±1伏特時所測得漏電流密度則會隨熱處理溫度上升而下降。

　　In this study, ZrO2 thin films were deposited on single-crystal silicon substrates using liquid phase deposition. The continuous films were formed by hydrolysis of zirconium sulfate (Zr (SO4)2‧4H2O) in the presence of H2O, and by controlling adequate (NH4)2S2O8 concentration. The deposited films were characterized by ICP-AES, SEM, DTA, FT-IR, XRD and TEM. For electrical properties, HP 4140B is used to measure the I-V curves, and the C-F curves are obtained by HP 4284.

　　The results of ICP-AES analysis reveal that as-deposited thin films were 9ZrO2•2SO3•9H2O(s). Form FT-IR and DTA results, the NH4+ band was remove at 500℃, and metastable band like SO2-OH group, and SO3-H2O group was eliminated at 750℃. After annealing, the metastable tetragonal phase ZrO2 thin film was observed at 500~600℃ for 2hrs, the coexistence tetragonal and monoclinic phase ZrO2 at 650~750℃ for 2hrs TEM result also shows the grain size of metastable t-ZrO2 film was 11nm at 600℃.

　　Base on the results of film thickness versus deposition time, all curves started with an oblique line, the ZrO2 thin film thickness increased with increasing deposition time. After 10 hours, the thickness of ZrO2 thickness was stabilized. The ZrO2 film growth rate results show the growth rate of film decreased with increasing [S2O82-]. Specially, when [S2O82-] reached 0.02M, the growth rate of ZrO2 film was down to 9.29 nmh-1, and then becomes leveled. From the C–F and J–V analyses, dielectric constant of ZrO2 layer was calculated to be 5.6、6.5、6.7 after annealing at 450、600、750℃ and the current density was decreased with increasing heat treatment temperature at gate voltage of ±1 V.

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