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| 研究生： |
許柏彥 Hsu, Po-Yen |
|---|---|
| 論文名稱： |
鈦鎳銅合金薄膜成長及特性之研究 Growth and Characterization of TiNiCu Alloy Thin Films |
| 指導教授： |
丁志明
Ting, Jyh-Ming |
| 學位類別： |
碩士 Master |
| 系所名稱： |
工學院 - 材料科學及工程學系 Department of Materials Science and Engineering |
| 論文出版年： | 2002 |
| 畢業學年度： | 90 |
| 語文別： | 中文 |
| 論文頁數： | 113 |
| 中文關鍵詞： | 結晶活化能 、表面化學 、鈦鎳銅合金薄膜 、形狀記憶合金 |
| 外文關鍵詞： | sputter, TiNiCu alloy thin film, shape memory alloy, crystallization activation energy, surface chemistry |
| 相關次數： | 點閱：122 下載：2 |
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本實驗中使用直流濺鍍法，以不同成份之靶材合成不同成份之鈦鎳銅薄膜，並藉由各種不同之分析探討薄膜成份、工作壓力與濺鍍速率之間的關係。我們發現工作壓力升高會導致鈦成份的升高，及銅、鎳成份的降低。而沈積速率會隨著薄膜中銅的成分增加而增加，但隨著鈦與鎳成份的增加而減少；沈積速率亦會隨著工作壓力的升高而降低。在室溫下濺鍍之鈦鎳銅合金薄膜為非晶態，必須經高溫真空熱處理使其結晶化，我們以DSC、XRD、TEM觀察薄膜由非晶態到結晶相的變化，並求其結晶活化能，我們發現鈦鎳銅薄膜之結晶活化能一開始隨著銅成份的增加而增加，在薄膜成份Ti45.7Ni41.1Cu13.2時出現最高值702.3 kJ/mol，之後便隨著銅成份增加而下降。有鑑於鈦鎳基形狀記憶合金已被廣泛應用在醫學方面，其薄膜所構成之微致動器必然也會在未來派上用場，因此我們以ESCA分析鈦鎳銅合金薄膜表面暴露於空氣中，各元素的表面化學狀態與氧化情形，發現薄膜之表面化學狀態以TiO2為主，且TiO2會壓抑薄膜表面銅與鎳的存在。在本研究中，我們會對於鈦鎳銅形狀記憶合金薄膜在薄膜製備、結晶行為及表面化學狀態方面的特性，作一番深入的探討。
Deposition of TiNiCu-based thin films was performed using a dc sputter deposition technique. The target composition was varied such that a series of TiNiCu thin films with various compositions was obtained. The relationship among film composition, deposition rate and working pressure were investigated. The activation energy for crystallization was determined. The activation energy ranges form 340.4 kJ/mol to 702.3 kJ/mol, depending on the film composition. It increases and then decreases with Cu concentration and the peak value occurs at a composition of Ti45.7Ni41.1Cu13.2. Surface chemistry of TiNiCu-base thin films was analyzed to examine effects of the film composition and the exposure time to the ambient condition. The result indicates a preferential formation of TiO2, which suppresses the surface concentrations of both Ni and Cu. The TiNiCu thin films were characterized using X-ray diffraction and transmission electron microscope (TEM) for the microstructure before and after annealing.
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校內：2003-07-24公開校外：2003-07-24公開