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研究生： 吳展誥
Wu, Zhan-Gao
論文名稱： 利用結構工程改善以原子層沉積技術備製之氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體之特性
Properties of AlGaN/GaN High Electron Mobility Transistors with Atomic Layer Deposited Gate Dielectric using Structural Engineering
指導教授： 王永和
Wang, Yeong-Her
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年： 2019
畢業學年度： 107
語文別： 英文
論文頁數： 128
中文關鍵詞： 氮化鋁鎵/氮化鎵 、金氧半高電子遷移率電晶體 、多懸浮閘極 、原子層沉積 、二氧化鉿 、三氧化二鋁
外文關鍵詞： AlGaN/GaN, metal-oxide-semiconductor high-electron-mobility transistor (MOSHEMT), dual-gate floating metal, multi-floating metal, atomic layer deposition, HfO2, Al2O3
相關次數： 點閱：137  下載：5 
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    • 本研究中我們嘗試使用電子束微影縮小線寬並備製比較了單、雙與多懸浮閘極之氮化鋁鎵/氮化鎵高電子遷移率電晶體，藉由多懸浮金屬閘極結構作為降低電晶體關閉漏電流並有效分佈更均勻之水平電場以提升原件耐壓與崩潰電壓，使之能達到同時縮小原件使吋並達到最大394伏崩潰電壓，最大電流密度與最大轉換電導值為632mA/mm和113 mS/mm。此外，我們以原子層沉積技術沉積高介電常數之三氧化二鋁與二氧化鉿薄膜，製備出多懸浮金屬閘極金氧半高電子遷移率電晶體，藉以改善元件表面特性減少表面漏電流增加最大電流密度。除此之外我們還有備製與研究不同間距之雙懸浮閘極與多懸浮閘極之金氧半高電子遷移率電晶體，其中以500奈米間距備製之雙懸浮閘極與多懸浮閘極金氧半高電子遷移率電晶體推測其擁有佳的自熱效應以及更寬廣的空乏區延伸所以有較大之崩潰電壓，但以250奈米間距之元件則有較佳的轉導。最後在金屬後退火比較後，相較於傳統結構金氧半高電子遷移率電晶體，多懸浮閘極金氧半高電子遷移率電晶體顯示出較均勻分布之電場以得到較高之崩潰電壓、較低之漏電流與較佳之閘極控制力。

    In this study, small gate length devices and dual-gate floating metal (DGFM) and multi-floating metal (MFM) AlGaN/GaN high-electron-mobility transistors (HEMTs) are fabricated. The breakdown voltage, leakage current, and transconductance of DGFM and MFM HEMTs are greatly improved since the structure of the DGFM and MFM distributed the electric field more uniformly in the horizontal direction of the devices. The maximum breakdown voltage reached 394V. The maximum drain current density and maximum transconductance were 632 mA/mm and 113 mS/mm, respectively. In order to use as a passivated surface and as an oxide layer, atomic layer deposition was utilized to deposit a high-dielectric-constant HfO2 and Al2O3 thin film, which lowered the leakage current and improved the maximum drain current density due to decreases in the surface traps and the surface leakage current path. In addition, DGFM and MFM MOSHEMTs with different spacers were also made and discussed. Compared with 250nm spacer devices, the DGFM and MFM MOSHEMTs with a 500nm spacer had a better self-heating effect and wider depletion extension that resulted in a higher breakdown. Finally, compared with the traditional AlGaN/GaN MOSHEMTs, the DGFM and MFM MOSHEMTs exhibited less drain leakage current and better gate controllability and significantly improved breakdown voltage after post metal annealing (PMA).

    中文摘要 I Abstract III 誌 謝 V CONTENTS VII FIGURE CAPTIONS IX TABLE CAPTIONS XIII Chapter 1 Introduction 1 1.1 Background 1 1.2 Motivation 4 1.3 Organization 7 Chapter 2 Principle of AlGaN/GaN HEMTs 8 2.1 Lattice Structure 8 2.2 Substrate material 11 2.3 Polarization effect of AlGaN/GaN Heterostructure 13 2.3.1 Spontaneous Polarization 13 2.3.2 Piezoelectric Polarization 16 2.2.4 Forming of two-dimensional electron gas 19 Chapter 3 Experiments and Device Fabrication 23 3.1 Experimental Equipment 23 3.1.1 Electron Beam Evaporator 23 3.1.2 Rapid Thermal Annealing System 24 3.1.3 Spin Coater 24 3.1.4 Mask Aligner 25 3.1.5 ICP Etching System 25 3.1.6 Atomic Layer Deposition 26 3.1.7 Electron beam lithography system 26 3.2 Fabrication Process 32 3.2.1 Preparation 32 3.2.2 Mesa Isolation 33 3.2.3 Source and Drain Ohmic Contact 34 3.2.4 Deposition of the Gate Dielectric Layer 35 3.2.5 Gate Pattern Definition 36 3.2.6 Schottky Gate Contact 37 Chapter 4 Results and Discussion 43 4.1 Physical Properties of ALD HfO2 and Al2O3 thin film 43 4.1.1Transmission Electron Microscopy 43 4.1.2 Energy-dispersive X-ray spectroscopy mapping measurement 45 4.2 Comparison of Al2O3 MOSHEMTs Based on Different Structures (MFM, DGDM, and Conventional) 47 4.2.1 Saturation drain current 47 4.2.2 Transfer Characteristics and Transconductance 51 4.2.3 Gate leakage current 54 4.2.4 Subthreshold Swing 55 4.2.5 Off-State Breakdown Voltage 57 4.3 Comparison of HfO2 MOSHEMTs Based on Different Structures (MFM, DGDM and Conventional) 59 4.3.1 Physical Properties 59 4.3.2 Saturation drain current 61 4.3.3 Transfer Characteristics and Transconductance 65 4.3.4 Subthreshold Swing 68 4.3.5 Transfer Characteristics Double Sweep Measurement 70 4.3.6 Gate Leakage Current 74 4.3.7 C-V Characteristics 77 4.3.8 Off-State Breakdown Voltage 79 4.3.9 Cutoff Frequency and Maximum Oscillation Frequency 81 4.3.10 Power-added efficiency & saturated output power 85 4.3.11 Flicker Noise 86 4.4 Investigation of Improvements in Breakdown Voltage for the Different Structures (MFM, DGDM and Conventional) 88 4.4.1 Proof of the depletion extension 88 4.4.2 Investigation of the electric field distribution 90 4.5 Comparison of Different Spacers on Different Structures (MFM and DGDM) 95 4.5.1 Physical Properties 95 4.5.2 Saturation drain current 97 4.5.3 Transfer Characteristics and Transconductance 99 4.5.4 Subthreshold Swing 101 4.5.5 Gate Leakage Current 103 4.5.6 C-V Characteristics 105 4.5.7 Off-State Breakdown Voltage 107 4.5.8 Cutoff Frequency and Maximum Oscillation Frequency 109 4.5.9 Power-added efficiency & saturated output power 111 4.5.10 Flicker Noise 113 Chapter 5 Conclusion 115 Chapter 6 Future Work 118 References 119

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