本論文針對氮化鎵/氮化鋁鎵系列異質接面光電晶體作為紫外光波段偵測器之相關製作與研究，包括於磊晶結構中有無插入一層低溫成長氮化鎵層 (LT-GaN) 之兩種異質接面光電晶體，並比較其元件訊號放大效果以及響應時間的改變。
為克服傳統 PIN 結構於紫外光波段只能得到極小的光響應值，故利用 NPN 磊晶結構之光電晶體為結合光導體電荷中性原理以及能帶不連續造成電洞累積現象來提高元件內部增益進而得到較高的光響應度。主要於基極 (base) /射極 (emitter) 接面成長異質結構使得能帶不連續形成能障 (barrier)，堆積由基極 (base) – 集極 (collector) 吸收接面所激發之電洞，由基極–射極之能障高度的改變而由外部電路補償額外電子於射極進而獲得較高的電流增益。
一般傳統氮化鎵紫外光偵測器的響應時間，主要是受到載子漂移時間與RC時間常數所影響，因此我們在異質結構之光電晶體的射極與基極之間插入一層低溫成長氮化鎵層，與一般異質結構之光電晶體做比較。由於低溫成長氮化鎵的結晶品質較差，載子在傳輸時會被內部缺陷所捕捉，因此我們便可將元件的響應時間從原本載子漂移限制轉換成載子生命期為主導，以加快元件的操作速度。

In this study, AlGaN/GaN hetero-junction photo-transistors (HPTs) in detecting ultraviolet spectra have been fabricated and characterized. One of the HPTs features as low-temperature grown GaN (LT-GaN) insertion layer between based and emitter layers to reduce dark current. The internal gain and response time are also studied for the HPTs with and without the LT-GaN layer.
The lack of internal gain in conventional p-i-n PDs often limits its applications in detecting low incident photon levels. The principle of neutral charges and band bending of band discontinuity in HPTs enhances internal gain and photo response. In principle, the band discontinuity at Base/Emitter hetero-junction leads to accumulation of photo-excited holes originating from the Base/Collector homo-junction. Thus electrons from external circuit must enter the device to neutralize the hole accumulation while the excess electrons inject from Emitter. The free electrons and holes accumulate at two sides of Emitter to change the continuity of band diagram for Base/Emitter junction and then attain high internal gain.
In addition, the conventional PD response time is mainly limited by the carrier drift velocity and RC time constant. To improve the performance regarding to aforementioned phenomena, we inserted a LT-GaN film between Base and Emitter. However, owing to the poor material quality of LT-GaN layer, photo-generated carriers would be trapped by native defects to limit the improvement.

第一章
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第二章
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第三章
[1] M. L. Lee, J. K. Sheu, and Yung-Ru Shu “Ultraviolet bandpass Al0.17Ga0.83N/GaN heterojunction phototransitors with high optical gain and high rejection ratio”, Appl. Phys. Lett. Vol. 92, No.5, pp.053506-1 - 053506-3, 2008.
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第四章
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