在BCD 的元件中，因其整合二極體、CMOS、DMOS三種不同功能的元件，各個元件間能有良好的隔離是 BCD 製程很重要的地方，因此深溝槽製程的控制是非常重要的，本研究發現在製程當中的深溝槽針狀缺陷，是來自於使用Lam SYNDION®進行深溝槽蝕刻，快速轉換製程(RAP) 循環的蝕刻步驟與沉積步驟失衡，使得蝕刻步驟無法將沉積步驟的沉積物去除，殘留點狀殘留物，在RAP 循環後期而形成針狀缺陷，本研究利用L18田口直交表尋找針狀缺陷的關鍵因子，再利用L9 直交表確認製程的穩定度，本研究發現增加沉積步驟的SF6 流量能夠有效的減少蝕刻中的針狀缺陷，並且可以利用減少蝕刻步驟的 SF6流量以及蝕刻步驟的時間來控制深溝槽蝕刻輪廓，使得深溝槽的關鍵尺寸仍能符合客戶需求，實驗程式在量產產品中對針狀缺陷的改善卓越。

BCD Process in semiconductor integrates three different function components of bipolar, CMOS, DMOS and it’s very important to have a good isolation between these components. Therefore, the process control of deep trench isolation (DTI) is especially important in BCD process. This study found the reason why needle defect happen in DTI process is the unbalancing of etching phase and deposition phase in Rapid Alternate Process (RAP) cycle in Lam SYNDION® etching tool. The polymer deposition in deposition phase can’t remove after etching phase induce the tiny residue and became needle defect in following RAP cycle. This study used L18 Taguchi orthogonal table to find key factor of needle defect, and then use the L9 orthogonal table to do window check for process. This study found adding SF6 flow in deposition phase can improve needle defect in DTI process and using reduce SF6 flow and process time in etch phase can control the DTI profile. After these tuning of etching process can control DTI profile critical dimension meet customer target and reduce needle defect in the same time. The production test of this recipe also had large improve in needle defect.

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