本研究利用二氧化鈦薄膜的光觸媒性質以熱還原的方式將銀金屬離子還原而生成銀奈米線。本實驗中分別利用化學氣相沉積法(CVD)與電子束蒸鍍法(E-Beam)於矽基板表面鍍上二氧化鈦薄膜。利用不同退火溫度改變薄膜的性質觀察其對奈米線生長的影響。其中薄膜的結晶性、薄膜的表面形貌皆對奈米線生長有很大的影響。
利用化學氣相沉積法(CVD)與電子束蒸鍍法(E-Beam)鍍出的二氧化鈦薄膜的光觸媒能力有所差異，光觸媒能力較佳可生成較多銀奈米線，且發現化學氣相沉積法製備之二氧化鈦薄膜為P型半導體。
此外，透過熱處理參數包括溫度與時間的改變，本研究找得到較佳生長奈米銀線的熱處理方式，並根據實驗結果推估出奈米線生長機制，確認為“熱輔助光還原金屬奈米線機制”。
本研究亦嘗試以此奈米線生長方式進行金、銅與鉑奈米線的生長。結果發現只有鉑無法順利生成奈米線，推測以此種方式生長金屬奈米線與金屬離子的價數有密切關係，但仍有待進一步探討。

In this study, we use the photocatalyst of TiO2 to reduce metallic ion and grow metallic nanowire by thermal reduction. We coat TiO2 thin film on silicon wafer by chemical vapor deposition and electron beam evaporator deposition. Then the thin film sample were annealed at different temperatures to modify their properties, thus we can observe what characters affect the growth of metallic nanowires. We find the crystallinity and morphology of thin film affect the growth of nanowires.
The phtocatalytic capability of the CVD TiO2 thin film is better than that of E-Beam, which also results in more metallic nanowires. It is also found that CVD TiO2 film is p-type semiconductor.
The AgNO3 in used as precursor to grow silver nanowires. The optimized thermal treatment parameters to grow silver nanowires were studied. And a growth by this mechanism was proposed as “Thermal-assisted photoreduction of metallic nanowires”. And gold and copper nanowires can also been grown by this method, however, the platinum was failed. We find that the valence of ion show significant effect upon the growth of metallic nanowires.

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