本實驗目的在對於液晶傳統的接觸式配向方式提出改進的方法，在實驗中我們使用了Kaufman-type的離子源直接對由直流濺鍍系統（DC-Sputter）所製鍍出來的類鑽碳薄膜（DLC）進行轟擊配向程序，並且製成液晶的樣品以供量測。

　　在離子源轟擊配向的程序中，我們使用了Ar氣體通入離子源，Ar離子產生後，以450ev的能量射出，經PBN中和後以與法線相差30度的方向撞擊類鑽碳薄膜。在類鑽碳膜的製程中，我們依序改變三個不同的製程參數，即改變甲烷佔總氣體流量的比值、磁控濺鍍靶源的功率及成長薄膜時的操作壓力，製鍍出三個系列的樣品。

　　為討論碳膜受轟擊程序前後的變化，我們對轟擊程序前的薄膜進行量測，包含傅氏紅外光吸收譜（FTIR）、可見光譜、橢圓儀及原子力顯微鏡（AFM）的量測等，對轟擊程序後的薄膜則進行傅氏紅外光吸收譜（FTIR）及原子力顯微鏡（AFM）的量測。為進一步確定各系列樣品的液晶配向效果，我們將受轟擊後的碳膜製成了水平配向液晶樣品並進行CONOSCOPY的量測，並將改變甲烷佔總氣體流量比系列樣品做成TN（Twist Nematic）配向液晶樣品進行光電量測。

　　經過水平配向液晶樣品盒的CONOSCOPY量測後，我們發現依序改變三個製程參數所製鍍出來的三個系列樣品，對液晶似乎都有配向效果。但經過TN配向液晶樣品盒的光電量測，則發現含有SP3鍵結比例較高的碳膜，光電量測的表現比較好，尤其在低電場擾動下，含有SP3鍵結比例高的薄膜比含有SP2鍵結比例高的薄膜更能穩定液晶配向。

　　The purpose of the experiment is to present a method to improve traditional alignment. We directly bombard DLC films deposited by DC-sputtering system with Kaufman-type ion source and then make them into LC cells to be measured. In the process of treatment, ion source products argon ions which have 450ev energy. After neutralizing with PBN, they bombard DLC films in the direction of 30o from surface normal.

　　In the process of deposition, we adjust three parameters which are ratio of CH4 to total gas, power of sputtering gun and operation pressure to product three series of samples.

　　In order to discuss the change of DLC films, we measure them with FTIR, spectrometer, ellipsometer and AFM in as-deposition and with FTIR and AFM after bombarding. To make sure the alignment effect of DLC films, we make DLC films which had been bombarded into homogeneous LC cells and then measure them with CONOSCOPY. We bombard a series of films which ratio of CH4 to total gas are changed and make them into TN LC cells and then measure them with Optic-electric measurement.

　　In the experiment, we find that both sp2 and sp3 bonds have good alignment effect. However, we find that sp3 bonds have bigger anchoring force than sp2 bonds in optic-electric measurement.

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