本研究為探討於1100℃經由熱碳還原GeO2粉末在純氬氣以及含有水氣的氬氣氣氛中，不同銅膜厚度對於生長Ge-GeOx 奈米線以及Si1-xGexOy之影響。於純氬氣氣氛中所生長的Ge-GeOx 奈米線為VLS機制。Ge-GeOx 奈米線的成核數目隨著銅膜厚度由10-30nm變多，當銅膜厚度為50nm時Ge-GeOx 奈米線為叢聚狀。高氬氣流量也會幫助Ge-GeOx 奈米線之成核。含水氣的氬氣(濕氬氣)中更促進Ge-GeOx 奈米線的生長，Ge-GeOx 奈米線生長的量隨水量從0.5-2ml而增加。然而過多的水量會消耗更多的碳粉，使的Ge-GeOx 奈米線生長反而被抑制。在濕氬氣氛中生長的Ge-GeOx 奈米線包含VLS以及VS機制。水氣扮演氧化以及還原的角色。於純氬氣氣氛中以及濕氬氣氣氛中Ge-GeOx 奈米線的生長機制個別描述。
在純氬氣以及濕氬氣中，CuSiGe催化位於矽基板周圍的紡錘狀以及羽毛狀紡錘狀以及羽毛狀之SiGeO奈米線的生長，生長機制皆為VLS。隨著銅膜厚度從50到10nm及導入水氣於氬氣中，SiGeO奈米線的形貌從羽毛狀變成紡錘狀，此結果似乎與羽毛狀頂端之球狀CuSiGe中Si/Ge比例比紡錘狀低有關。在濕氬氣中，抑制SiGeO奈米線藉由氫原子還原成Ge-SiGeO 核殼奈米線導因於動力效應。

Effects of Cu films on the growth of Ge-GeOx core-shell nanowires (Ge-GeOx NWs) and Si1-xGexOy nanowires (SiGeONWs) on Si substrates in dry Ar and moist Ar, respectively, via the carbothermal reduction of GeO2 powders at 1100℃ were studied. In dry Ar the growth of Ge-GeOx NWs follows the vapor-liquid-solid (VLS) process. The nuclei of Ge-GeOx NW increased with the thickness of Cu films in the range of 10-30 nm. With the Cu films 50 nm thick the Ge-GeOx NWs agglomerated. Higher Ar flow rate also enhanced the nucleation of Ge-GeOx NWs. In moist Ar the growth of Ge-GeOx NWs was further enhanced and their amount increased with the volume of water in the range of 0.5-2 ml. However, more water degraded the growth of Ge-GeOx NWs because of the exhaustion of much graphite powders. The growth of Ge-GeOx NWs follows both VLS and vapor-solid (VS) processes. The water vapor served as the role of oxidizer and reducer. The mechanisms for the growth of Ge-GeOx NWs in dry Ar and moist Ar are discussed, respectively.
The CuSiGe-catalyzed growth of spindle- and featherlike SiGeONW assemblies in dry Ar and moist Ar, following the VLS process, occurred on the periphery of the Si substrates. With decreasing the thickness of Cu films from 50 to 10nm and introducing the water vapor into flowing Ar , the morphology of SiGeONWs assemblies changed from featherlike to the spindlelike. These results seem to be concened with the smaller Si/Ge ratio of the CuSiGe spheroid on the tops of featherlike assemblies than that of spindelike ones. In moist Ar the inhibition of the reduction of SiGeONWs by atomic hydrogen to form Ge-SiGeO core-shell nanowires may be due to the kinetic effect.

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