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研究生： 陳威昇
Chen, Wei-Sheng
論文名稱： 氮化矽磊晶薄膜表面之掃描穿隧能譜研究
Scanning Tunneling Spectroscopic Study of Epitaxial Silicon Nitride Surface
指導教授： 吳忠霖
Wu, Chung-Lin
學位類別： 碩士
Master
系所名稱： 理學院 - 物理學系
Department of Physics
論文出版年： 2011
畢業學年度： 99
語文別： 中文
論文頁數： 70
中文關鍵詞： 掃描穿隧顯微術 、掃描穿隧能譜 、超薄氮化矽 、氮化
外文關鍵詞： RF-Plasma, STM, STS
相關次數： 點閱：84  下載：4 
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    • 本論文主要透過即時量測掃描穿隧能譜，研究單晶β-Si3N4薄膜在不同氮電漿源的氮化條件下的表面電子結構。我們可以藉由比較理論計算的穿隧電流去決定出超薄單晶氮化矽薄膜的能隙大小與各種成長條件下的表面態。氮電漿源在低溫氮化，將會形成非晶的氮化矽薄膜，而從穿隧能譜的結果可以看到價帶極大值偏移的現象，而可能造成的原因是受到N2p軌域主導整個價帶邊緣的影響。隨著增加氮化溫度與退火溫度的條件下，由於消除大量的缺陷態，我們成功地改善單晶β-Si3N4薄膜的品質。從能譜結果讓我們了解在掃描穿隧顯微術與能譜上的穿隧電流來源以及決定出β-Si3N4/Si(111)異質接面的價帶不連續值。

    The electronic structures of crystalline β-Si3N4 formed in different plasma nitridation conditions were in situ investigated using scanning tunneling spectroscopy (STS). Comparing with the theoretical computation of tunneling current, the band gap energy and various surface states of β-Si3N4 ultra-thin film can be determined. On the non-crystalline Si3N4 thin film formed by low-temperature plasma nitridation, the spectroscopic results show the evidence of valence band maximum (VBM) shifting due to the N2p dominant valence band edge. With increasing the nitridation and post annealing temperature, we show the crystalline quality of β-Si3N4 can be improved due to the elimination of defect states in the tunneling spectra. These spectroscopic results allow us to understand origins of the tunnel current in scanning tunneling microscopy and spectroscopy experiments on these surfaces as well as the determination of β-Si3N4/Si(111) band offset.

    第一章 研究方向與文獻回顧 1 1.1緒論 1 1.2 半導體表面態之探討 3 1.2.1 Si(111)-7×7 表面結構 3 1.2.2 Si(111)-7×7 表面電子結構之量測 5 1.2.3 Si(111)-7×7穿隧能譜影像 7 1.3氮化矽表面結構和電子結構的量測 8 1.3.1氮化矽表面結構 8 1.3.2氮化矽表面電子結構之量測 11 1.4半導體能隙量測 15 1.5探針引誘效應(TIP INDUCED BAND BENDING, TIBB) 18 第二章 理論機制 19 2.1 掃描穿隧顯微術基本原理 19 2.2 掃描穿隧能譜術(SCANNING TUNNELING SPECTROSCOPY, STS) 21 2.2.1掃描穿隧能譜術基本原理 21 2.2.2掃描穿隧能譜術理論推導 22 2.2.3穿隧電導原理 24 2.2.4歸一化穿隧電導 25 2.2.5歸一穿隧能譜的應用 26 2.3鎖相放大器工作原理 27 2.4 穿隧電流理論計算 30 第三章 實驗裝置與量測方式 35 3.1 儀器裝置 35 3.1.1 超高真空腔體準備 36 3.2 實驗裝置與樣品製備 38 3.2.1 STM 探針製作 38 3.2.1 Si(111)-7×7 基板製備 39 3.2.3 超薄氮化矽薄膜(Ultra Film β-Si3N4)製備 41 3.3實驗操作與測量能譜 44 3.3.1實驗參數制定 44 3.3.2 超薄氮化矽穿隧能譜 46 第四章 研究結果與討論 47 4.1隨氮化溫度改變下以高溫後退火之氮化矽掃描穿隧能譜 47 4.2隨氮化溫度變化下之氮化矽掃描穿隧能譜 53 4.3探針引誘效應(TIP INDUCED BAND BENDING, TIBB)之探討 58 4.3.2 探針與氮化矽表面的能帶結構 61 4.4室溫氮化下不同後退火溫度之穿隧能譜 63 4.5 Β-SI3N4/SI(111) 的價帶不連續值(BAND OFFSET)與異質接面能帶圖 65 第五章 總結 66 第六章 參考文獻 68

    1. G. Binning, H. Rohrer, Ch. Gerber, and E. Weibel, Phys. Rev. Lett . 50, 2 (1983).
    2. K.Pandey, Phys. Rev. Lett. 47, 1913 (1981)
    3. R. S. Becker, Golovchenko, D. R. Hamann and B. Swartzentruber, Phys. Rev. Lett. 55, 2032 (1985)
    4. Robertson, Rep. Prog. Phys. 69, 327,(2006)
    5. A. Y. Liu and M. L. Cohen, Phys. Rev. B 41, 10 727 (1990)
    6. Y.-N. Xu and W. Y. Ching, Phys. Rev. B 51, 17 379 (1995).
    7. A. J. van Bommel and E. Meyer, Surf. Sci. 8, 381 (1967)
    8. E. Bauer et al., Phys. Rev. B 51, 17 891 (1995)
    9. X.-S. Wang et al., Phys. Rev. B 60, R2146 (1999)
    10. M. Nishijima et al., Surf. Sci. 137, 473 (1984)
    11. B. Röttger, R. Kliese, and H. Neddermeyer, J. Vac. Sci. Technol. B 14, 1051 (1996)
    12. M. D. Wiggins, R.J. Baird, and P. Wynblatt, J. Vac. Sci. Technol. 18, 965 (1981);Ph. Avouris and R. Wolkow, Phys. Rev. B 39, 5091 (1989)
    13. Y. Morita and H. Tokumoto, Surf. Sci. 443, L1037 (1999)
    14. A. G. Schrott and S. C. Fain, Jr.,Surf. Sci.111, 39 (1981);123, 204 (1982)
    15. J. S. Ha et al., Appl. Phys. A 66, S495 (1998)
    16. K. Takkayanagi, Y. Tanishiro, M.Takahashi, and S. Takahashi, J. Vac. Sci. Technol. A 3, 1502 (1895)
    17. Ph. Avouris and R. Wolkow, Phys.Rev B, 39, 5091(1989)
    18.R. Losio, K. N. Altmann, and F. J. Himpsel, Phys. Rev B. 61, 10845 (2000)
    19. F. J. Himpsel, Surf. Sci. Rep. 12, 1 (1990)
    20. Xue-sen Wang, Guangjie Zhai, Jianshu Yang, and Nelson Cue, Phys. Rev B. 60, R2146 (1999)
    21. H. Ahn, C.-L. Wu, S. Gwo, C. M. Wei, and Y. C. Chou, Phys. Rev. Lett. 86, 2818 (2001)
    22. C.-L. Wu, J.-L. Hsieh, H.-D. Hsueh, and S. Gwo, Phys. Rev B. 65, 045309 (2002)
    23. J. Robertson, J. Appl. Phys. 54, 4490 (1983)
    24. F. Bozso and Ph. Avouris, Phys. Rev. B. 38, 3937 (1988)
    25. Yong-Nian Xu and W. Y. Ching, Phys. Rev. B. 51, 17379 (1995)
    26. J. W. Kim and H. W. Yeom, Phys. Rev. B. 67, 035304 (2003)
    27. G. L. Zhao and M. E. Bachlechner, Phys. Rev. B. 58, 1887 (1998)
    28. M. Yang, R. Q. Wu, W. S. Deng, L. Shen, Z. D. Sha, Y. Q. Cai, Y. P. Feng, and S. J. Wang, J. Appl. Phys. 105, 024108 (2009)
    29. L. Ivanova, S.Borisova, H.Eisele, M. Dähne, A.Laubsch and Ph. Ebert, Appl. Phys. Lett. 93, 192110 (2008)
    30. H. Eisele, S. Borisova, L. Ivanova, and M. Dähne, Ph. Ebert, J. Vac. Sci. Technol. B. 28, C5G11 (2010)
    31. R. M. Feenstra and Joseph A. Stroscio, J. Vac. Sci. Techno. B. 5, 923(1987)
    32. N. D. Jäger, E. R. Weber, K. Urban, and Ph. Ebert, Phys. Rev. B. 67, 165327 (2003)
    33. Ph. Ebert, S. Schaafhausen, A. Lenz, A. Sabitova, L. Ivanova, M. Dahne, Y-L.Hong, S.Gwo, and H. Eisele, Appl. Phys. Lett. 98, 062103 (2011).
    34. M. Weimer, J. Kramar, and J. Baldeschwieler, Phys. Rev. B. 39, 5572 (1989)
    35. W. Kaiser, L. Bell, M. Hecht, and F. Grunthaner, J. Vac. Sci. Technol. A. 6, 519(1988)
    36. Dawn A. Bonnell,”Scanning Tunneling Microscopy and Spectroscopy Theory”, Techniques, and Applications, VCH publish (1993)
    37. R.M. Feenstra, J.A. Stroscio, and A.P Fein, Surf. Sci. 181, 295 (1987)
    38. 謝錦龍，《單晶氮化矽薄膜掃描穿隧能譜研究》碩士論文，國立清華大學物理系，民國88年。
    39. J. Bono and R. H. Good, Jr., Surf. Sci. 175, 415 (1986)
    40. J. G. Simmons, J. Appl. Phys. 34, 1793 (1963)
    41. Shang-Yuan Ren and W. Y. Ching, Phys. Rev. B. 23, 5454(1981)
    42. Yong-Nian Xu and W. Y. Ching, Phys. Rev. B. 51,17379 (1995)
    43. Yee-Chia Yeo, Qiang Lu, Pushkar Ranade, Hideki Takeuchi, Kevin J. Yang, Igor Polishchuk, IEEE Electron Device Letter. 22, 227(2001)
    44. M. Prietsch, A. Samsavar, and R. Ludeke , Phys. Rev. B. 43, 11850(1991)
    45. R. M. Feenstra, J. Vac. Sci. Technol. B. 21, 2080 (2003)
    46. R. I. G. Uhrberg, G. V. Hansson, J. M. Nicholls, and P. E. S. Persson, Phys. Rev. B. 31, 3805 (1985)
    47. Hong-Mao Lee (李弘貿), Cheng-Tai Kuo (郭承泰), Hung-Wei Shiu (許紘瑋), Chia-Hao Chen (陳家浩) and Shangjr Gwo (果尚志), Appl. phys. Lett. 95, 222104 (2009)

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