本論文中，主要藉由低溫水熱法及水溶液成長金屬修飾氧化鋅奈米結構，並分別應用到紫外光波段之金屬-半導體-金屬結構光感測器、場發射器和葡萄糖感測器元件之應用，其中論文主軸可分為三部份，第一部分主要為鋁摻雜氧化鋅奈米柱紫外光感測器之研究；第二部分為鋁摻雜氧化鋅奈米柱場發射元件之研究及金奈米粒子修飾氧化鋅奈米片之研究；最後為氧化鋅奈米片製作葡萄糖感測器之研究。
在本文一開始，主要介紹藉由低溫水熱法成長具低頻雜訊之鋁摻雜氧化鋅奈米柱。鋁摻雜氧化鋅奈柱具有六角纖鋅礦結構及尖銳的表面形態，平均長度和直徑約為1.45 μm和68 nm。我們成功製造出鋁摻雜氧化鋅奈米金屬-半導體-金屬紫外光感測器。施加1V順向偏壓，其紫外光對可見光的拒斥比約為1.51×103，元件量測光響應度為181 A/W。在低頻雜訊的分析，此光感測器的等效雜訊功率估計為1.17 × 10-11 W，其相對應檢測度4.03 × 1012 cm·Hz0.5W−1。結果說明鋁摻雜可以有利於提升感測器的光響應。
第二部分有兩個研究主題：分別為鋁摻雜氧化鋅納米柱應用於場發射元件與金納米粒子修飾氧化鋅納米片應用於場發射元件。當元件分別在暗箱中和紫外光照射下量測元件時，場發射元件能具有較低的導通電場，對於鋁摻雜的氧化鋅場發射元件在暗箱中和紫外光照射下分別為2.35和1.51V /μm，對於純氧化鋅奈米片與金奈米粒子裝飾氧化鋅奈米片的場發射元件為6.04和4.91V /μm。 對於鋁摻雜氧化鋅奈米柱的場發射元件，場增強因子提升到10137，對於金奈米粒子修飾氧化鋅奈米片的場發射元件，場增強因子提升到9298。這也可歸因於鋁奈米粒子和金奈米粒子可通過場發射收集更多電子並使電子容易從奈米粒子發射。
最後，我們成功通過氧化鋅奈米片，應用於葡萄糖感測器元件，所製作葡萄糖感測器元件具有43.4μA/cm2-mM的靈敏度，而回歸係數值約為0.99，這可以歸因於改變奈米結構有助於提升吸附面積，使得電子交換傳遞的效率提升。

In this dissertation, the metal-modified ZnO nanostructures were grown on an a-ZnO seed layer via the low-temperature hydrothermal method (90 °C) and applied to metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD), field emission devices and glucose sensors. This dissertation is divided into three parts. In the first part, Al-doped ZnO nanorods UV PD are investigated. In the second part, Al-doped ZnO nanorods field emission devices and the ZnO nanosheet that is decorated by Au nanoparticle is discussed. Finally, the third part discusses glucose sensors that fabricated by the ZnO nanosheet.
We successfully fabricate the Al-doped ZnO nanorods UV PD. UV-to-visible rejection ratio is about 1.51×103, and the Responsibility to Light is 181 A/W when biased at 1 V. Analyzing low-frequency noise of device, finding that the noise equivalent power (NEP) of the light sensor is about 1.17 × 10-11 W, and the corresponding detectivity is 4.03 ×1012 m·Hz0.5W−1. The results show that aluminum doping is beneficial to enhance the photo response of the sensor.
There are two research topics in the second part, Al-doped ZnO nanorods field emission (FE) devices, Au Nanoparticles (NPs) -decorated ZnO nanosheet FE devices. When the devices was measured in the dark box and the UV irradiation, field emission device has lower turn-on electric field, 2.35 and 1.51 V/μm for Al-doped ZnO nanorods FE device, 6.04 and 4.91 V/μm for Au NPs-decorated ZnO nanosheets FE device. And the corresponding field enhancement factors are enhanced to 10137 for Al-doped ZnO nanorods FE device, 9298 for Au NPs-decorated ZnO nanosheets device. This can be attributed to Al NPs and Au NPs can collect more electrons by field emission and make electrons emit easily from the NP.
Finally, ZnO nanosheet were successfully applied to glucose sensors. The sensitivity of the glucose sensors is 43.4μA/cm2-mM, and regression coefficient is about 0.99. The reason why the transmission speed was enhanced is due to the transmission speed of electron is much higher when the adsorption area of nanostructure is increased.

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