本篇論文所研究對象為逆偏式矽發光二極體。主要分為三個部分，元件與晶片設計、元件的性能量測以及提出初步整合與應用的實驗架構。第一部分元件與晶片設計，不變動任何製程步驟及添加任何後處理的條件下，使用台積電標準CMOS製程-T18HVG2製作逆偏式矽發光二極體。元件設計是以SPAD元件為基礎並選擇四項研究參數，發光區半徑、p-n接面種類、電極位置、漏斗角度，探討參數對元件的影響及性能並藉由TCAD模擬其各元件的電學性能，如崩潰電壓及衝擊離子化區域。Laker軟體繪製晶片並加入單光子雪崩二極體以利達到本篇論文的最終目標與動機-「整合及降低成本」。第二部分性能量測，針對各元件的I-V Curve、Optical power、Spectrum進行量測，並結合顯微鏡觀察元件不同電流下的發光形狀及分佈，進而推斷垂直式p-n接面影響光功率甚大。第三部分整合與應用，在本次下線晶片中加入單光子雪崩二極體，整合光源與光偵測器發展類似光達之功能並展示商業產品ST的VL53L1x微型光達之應用。最後提出混合兩種增加光功率的結構，希望藉由這兩種提高光功率的效果可以大幅改善逆偏式矽發光二極體的窘境。

The reverse-biased silicon light-emitting diode is research object of the thesis. The first part is to use TSMC 0.18um CMOS high-voltage process to make the reverse-biased silicon light emitting with no change to the processing procedures. All components are based on Single-Photon Avalanche Diode (SPAD) with four design paraments, radius of light-emitting zone, two type of p-n junction, shape and position of contact and funnel angle. The Electrical properties of components such as breakdown voltage and impact ionization are simulated by TCAD. Integrating SPAD are designed on the chip for a application. The second part is performance measurement. All components are measured for I-V Curve, Optical power and Spectrum and observed the shape and distribution of luminescence under microscope with different currents. The inference that vertical p-n junction is good for increasing the optical power. The third part is Integration and Application. The Integrated light source and Photodetector developed a function similar to LiDAR and using VL53L1x TOF Ranging Sensor of STMicroelectronics for an application Finally, we present a new structure with combination two structure which has been raised to improve the optical power.

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