二、六族氧化鋅材料為一新興之半導體材料，頗具研究價值，本論文研究內容涵蓋三個大方向，包含: (1)氧化鋅薄膜系列半導體材料應用於光電子元件之研製。(2)氧化鋅奈米線之合成與其光學特性之分析。(3)氧化鋅奈米線機械性質之探討與楊式模數之理論計算。其個別之研究結果如下所述:
首先我們製作蕭特基二極體來研究氧化鋅金半接面之特性，我們使用銥金屬來當做蕭特基的接觸電極；在歐姆接觸電極方面，我們則利用傳統的鈦/鋁/鈦/金四種金屬並加以退火之處理。根據電性量測結果發現我們使用銥金屬來當做電極時，其蕭特基二極體具有良好的整流特性，緊接著我們也利用熱離子放射理論、諾德理論與電容-電壓量測等三種方法來計算金屬銥與氧化鋅半導體材料間之蕭特基能障值分別為: 0.824、0.837與0.924 eV。進一步的我們也將元件操作在不同的高溫下來研究其金半接面之特性並計算不同溫度下的蕭特基能障值，由結果可以發現隨著溫度的升高，金半接面的蕭特基能障值有降低的趨勢。
在氧化鋅紫外光光檢測器的研製方面，我們使用銥金屬來製作金半金光檢測器，根據電性量測結果發現: 當偏壓為5伏特時，其光電流與暗電流大小分別為4.3 x 10-4 與1.64 x 10-6 安培，兩者差了約兩個級數；另外，在光響應量測方面:當偏壓為1伏特且入射光為370 nm時，可以得到0.138 A/W 的光響應值；進一步再進行雜訊等效功率與檢測度的量測與計算，當給定偏壓為1伏特且頻率為100赫茲時，其值分別為6 x 10-13 W與1.18 x 1012 cmHz0.5W-1，由以上結果可以顯示出我們的元件有不錯的操作特性。更進一步的我們將製作完成的氧化鋅金半金光檢測器在通氧且溫度為500 0C的環境下進行熱退火，經由光電流、暗電流與光響應的量測結果發現有熱退火的元件其操作特性提升了，其原因為銥金屬在通氧的熱處理後會形成二氧化銥而增加了光的穿透性與提升金半接面的蕭特基能障。
在論文的第三部分中，我們嘗試利用光輔助的化學氣相沉積法在金屬與半導體接面沉積一層二氧化矽絕緣層來降低我們氧化鋅金半金光檢測器的暗電流，藉由製作此金-絕-半光檢測器來達到元件的最佳化。
另外，在氧化鋅金氧半場效電晶體的製作上，我們藉著利用射頻濺鍍的方式來調變主動區氧化鋅層的厚度，使得我們的金氧半場效電晶體達到正常的操作效果，此處我們亦使用光輔助的化學氣相沉積儀來成長二氧化矽薄膜，其厚度約為32 nm。在元件的特性量測方面: 金氧半場效電晶體的閘極漏電流比金半場效電晶體降低近三個數量級（10-5A→10-2A），汲極電流、最大轉移電導及閘極操作平台分別為61.1 mA/mm、 10.2 mS/mm及2 V。即是在高溫操作氧化鋅場效電晶體的最大轉移電導及汲極電流仍然有45.7 mA/mm及 7.67 mS/mm，顯示出利用寬能隙半導體製作之場效電晶體在高溫下依然具有不錯之操作特性。
此論文中我們也研究氧化鋅之一維奈米結構的成長，亦即氧化鋅奈米線的成長。成長的方法為具有大面積成長潛力之低溫水溶液化學合成法。首先藉由成長溫度之調變來獲得氧化鋅奈米線之最佳晶格結構，根據研究結果發現，當溫度為90 0C 時氧化鋅奈米線具有最佳之晶格結構;此外我們也藉由調變不同的成長時間來觀測不同階段的氧化鋅奈米線型態，並整理出氧化鋅奈米線的成長機制，進而可以輕易的來得到任何所需之不同粗細長短的氧化鋅奈米柱來加以應用。最後，藉由利用黃光曝光微影製程，我們可以控制氧化鋅奈米線之成長區域，亦即具備選區成長之技術。
論文的最後則是氧化鋅奈米線機械效應之研究。此部分研究我們所使用的氧化鋅奈米線是利用爐管經由自組式的固液氣(self-catalyzed vapor-liquid-solide, VLS)方式在玻璃基板上所成長。並藉由控制不同的氧流量來得到粗細與長度不同的氧化鋅奈米線。A樣本為直徑約100奈米，長度約2000奈米；B樣本則為直徑約30奈米，長度約800奈米的氧化鋅奈米線。接著將我們的氧化鋅奈米線樣本進行奈米壓印實驗。經由奈米壓印所量得之實驗結果發現:一開始隨著施加在氧化鋅奈米線上的應力增加，使得氧化鋅奈米線產生正常的形變，當施加更大的應力時，則會有挫曲的現象發生。發生挫曲的應力大小由氧化鋅奈米線的長短粗細比例來決定。由於樣本B的長寬比例比樣本A大，所以施加比較小的應力即可發生挫曲的現象。最後再以尤拉公式為基礎利用理論計算的方式獲得氧化鋅奈米線的楊氏模數(Young’s modulus)介於117~454 GPa間。

ZnO has attracted much attention in recent years. So, in this thesis, we not only discuss the performance of ZnO-related optoelectronic devices but also study the growth and mechanical characteristics of one-dimensional ZnO nanostructure. The abstract describes as follows:
In the beginning of this thesis, the research of ZnO Schottky diodes with Iridium (Ir) Schottky contact electrode were described. From the I-V curve, it was found that the ZnO Schottky diode shows rectification and the Schottky barrier height between ZnO and Ir were 0.824 eV, 0.837 eV and 0.92 which were calculated by thermionic emission model, Norde model and C-V measurement, respectively. We also increased the measured temperature and found the value of barrier height decreased with the temperature increased.
In addition, ZnO metal-semiconductor-metal (MSM) photodetectors with Ir electrodes were also fabricated. ZnO epitaxial films used in this study were grown on sapphire (0001) substrates by using RF plasma-assisted molecular beam epitaxy. It was found that Schottky barrier heights at the non-annealed and 500oC-annealed Ir/ZnO interfaces were around 0.65 and 0.78 eV, respectively. With an incident wavelength of 370 nm and 1 V applied bias, it was found that the maximum responsivities for the Ir/ZnO/Ir MSM photodetectors with and without thermal annealing were 0.18 and 0.13 A/W, respectively. For a given bandwidth of 100 Hz and 1 V applied bias, we found that noise equivalent power and corresponding detectivity D* were 6x10-13 W and 1.18x1012 cmHz0.5W-1, respectively.
Furthermore, ZnO MSM and MIS UV photodetectors were fabricated. In this study, ZnO epitaxial films were also grown on sapphire (0001) substrates by MBE. We deposited different 5 kinds of SiO2 layer by Photo-assistant chemical vapor deposition (Photo-CVD) followed by Ir film deposition and photolithography. From the I-V analysis, it was found that we can achieve smaller dark current, larger photocurrent to dark current contrast ratio and larger UV to visible rejection ratio from the ZnO MIS UV photodetector with 98 nm photo-CVD SiO2 layer. It was also found that we can improve the performance of ZnO MIS PDs with 98 nm photo-CVD SiO2 layer by 500 0C O2 annealing.
On the part of the ZnO field-effect-transistors (FETs). We fabricated the ZnO-based metal-semiconductor-field-effect-transistor (MESFET) and metal-oxide-semiconductor-field-effect-transistor (MOSFET). High quality SiO2 was successfully deposited onto ZnO by photochemical vapor deposition (photo-CVD) as the insulating layer. The fabricated ZnO-based MESFETs compared with similar structures, it can be found that the gate leakage current was decreased to more than three orders of magnitude by inserting the photo-CVD oxide layer in between ZnO and gate metal. With a 2 m gate length, we found the saturated Ids and maximum gm of the fabricated ZnO-based MOSHFET were 61.1 mA/mm and 10.2 mS/mm, respectively, at room temperature. Even operated at higher temperature, 150oC, the gm and Id of device still keep at 45.7 mA/mm and 7.67 mS/mm. Such a result indicated that the ZnO MOSFETs with photo-CVD SiO2 films is highly potential for application in hard environment.
In this thesis, we also research the growth of one-dimensional ZnO nanowires. The well-aligned crystalline ZnO nanowire arrays were fabricated by low-temperature chemical-bath deposition. Zn(NO3)2/NH4OH solution was used to deposite ZnO nanowires on the glass substrates by the hydrothermal treatment at 90oC. We prepared different thinckness of ZnO seed layer by RF sputtering. We observed the thicker ZnO seed caused more perpendicular ZnO nanowires and resulted in inclined ZnO nanowires. Furthermore, the dimensional structure of ZnO hexagonal crystals become deformed nanowires. The ZnO nanowire arrays were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction and photoluminescence spectroscopy. Furthermore, the ZnO nanowire arrays exhibited a strong band-edge emission centered at 380 nm after 450 oC vacuum annealing. Besides, we also have the ability to control the size of the ZnO NWs , whenever length or radius and the selected area to grow the ZnO NWs.
Finally, the mechanical properties of vertical single-crystal ZnO nanowires on ZnO:Ga/glass templates were characterized by nanoindentation experiments in this work. The results from X-ray diffraction and Raman spectra show good crystal quality for the ZnO nanowires. The buckling loads were found to be 1465 and 215 μN for the ZnO nanowires of 100 and 30 nm diameters, respectively. When fixed-fixed column mode was used, it was found that Young’s modulus of the ZnO nanowires of 100 and 30 nm diameters were 117 and 232 GPa while critical buckling strains were 0.62% and 0.35%, respectively. On the other hand, when we employed fixed-pinned column mode, it can be seen that Young’s modulus were 229 and 454 GPa while critical buckling strains were 0.32% and 0.18%, respectively. Buckling behavior of the ZnO nanowires was significantly predicted by Euler buckling model in this work.

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