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研究生： 徐昇明
Hsu, Sheng-Ming
論文名稱： 藉由插入中間層二氧化矽奈米層改善n型氧化鋅與p型氮化鎵發光二極體的電激發光的表現
Improved performance of electroluminescence in a n-ZnO microrod/p-GaN-based light-emitting diodes with SiO2 inserting nanolayer
指導教授： 徐旭政
Hsu, Hsu-Cheng
學位類別： 碩士
Master
系所名稱： 理學院 - 光電科學與工程學系
Department of Photonics
論文出版年： 2016
畢業學年度： 104
語文別： 英文
論文頁數： 71
中文關鍵詞： 氧化鋅微米柱 、偏振 、光學侷限層 、電子阻擋層 、發光二極體
外文關鍵詞： ZnO microrod, optical confinement, polarization emission, electron blocking confinement, light-emitting diode
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    • 氧化鋅因為具有寬能隙(3.37eV)與大激子束縛能(60meV)，使得氧化鋅成為一個具有潛力的短波長UV LED與LD半導體材料。在材料的結構上，氮化鎵因為與氧化鋅只有些微的晶格不匹配和相似的晶型，因此常被用來與氧化鋅做成p-n二極體。此外，氧化鋅微米柱還具有的六角柱結構，能使光侷限在氧化鋅內並提供了良好的光共振腔。
    為了增加UV偏振的n型氧化鋅/p型氮化鎵LED的發光強度，我們插入一層二氧化矽的奈米層，二氧化矽對於我們元件不只擁有光學侷限的效果，也擁有電子阻擋層的能力，可以使我們元件的光、電性都得到提升，這個結構也擁有良好的二極體特性和低電壓閥值 (4.5V) 和強壯的電激發光強度。並且我們利用偏振實驗來分析電激發光的光譜的來源。

    Zinc oxide (ZnO) has a wide band-gap (3.37eV) and also a large exciton binding energy (60meV) which makes it valuable for short wavelength UV light emitting diodes (LED) and laser device. As a construction material, GaN are often chosen due to its little lattice mismatch and crystallographic similarity with ZnO. A ZnO microrod has an advantage in its hexagonal microcavity which provides a superior resonant cavity for the light confinement.
    To enhance emitting intensity, an intermedium layer between the ZnO microrod and p-GaN thin film was employed. Here, we demonstrate an intense UV polarized single horizontal n-ZnO microrod/p-GaN heterojunction light-emitting diodes with a sandwiched SiO2 layer. The characterization of the fabricated device shows good diode behavior with low turn-on voltage of 4.5 V and strong electroluminescence (EL) intensity with dominant peak of 392 nm under the operation of forward injection currents. The enhanced EL performance is associated with optical confinement and carrier confinement effects by inserting SiO2 intermediate layer. The origin of EL emission bands can be confirmed by polarization-resolved EL measurement.

    摘要 I Abstract II 致謝 III Contents IV List of Tables VII List of Figures VIII 1 Introduction 1 1-1 Preface 1 1-2 Motivation 7 2 Background Theories 8 2-1 Characteristics of Zinc Oxide 8 2-2 Spontaneous Emission of Zinc Oxide 10 2-2-1 Ultraviolet Emission 10 2-2-2 Green Emission 12 2-3 Optical Confinement 13 2-3-1 Snell’s Law 13 2-3-2 Total Internal Reflection 14 2-4 Polarization Emission of the Near-Band-Edge Emission 16 2-5 p-n Heterojunction 19 2-5-1 Structure of a p-n Junction 19 2-5-2 Properties of a p-n Junction 19 2-6 Parasitic Resistance Estimation[38] 23 2-7 Contact between Metal and Semiconductors[42] 25 2-7-1 Schottky Barrier [42] 25 2-7-2 Ohmic Contact[42] 28 2-7-3 Metal Choose for n-ZnO and p-GaN for Ohmic Contact 30 2-7-4 Electron Blocking Layer 30 3 Experiment Process 32 3-1 Experimental Procedure 32 3-2 Chemical and Consumable 33 3-3 Growth System of ZnO Microrods 34 3-3-1 Chemical Vapor Transport System 34 3-3-2 Substrate Cleaning 36 3-3-3 Growth of ZnO Microrods 37 3-3-4 Transfer of ZnO Microrod 38 3-4 Devices Fabrication 39 4 Measurement Instrument 41 4-1 Raman Spectroscope 41 4-2 Field-Emission Scanning Electron Microscopy 44 4-3 Photoluminescence 45 4-4 Electroluminescence 47 4-5 Semiconductor Characterization System 49 5 Experiment Results and Discussions 50 5-1 SEM & Raman Analysis 50 5-2 Continuous-wave PL Analysis 51 5-3 Electrical and Optical Characterization Analysis 53 5-3-1 I-V Characteristic 53 5-3-1-1 I-V Characteristic of the Electrode 53 5-3-1-2 I-V Characteristic of the Device 54 5-3-2 Electroluminescence 55 5-3-3 Optical Confinement Analysis 57 5-3-4 Electron Blocking Layer & Wall-Plug Efficiency 58 5-4 Polarization Emission Analysis 60 5-5 Stability of Device 63 6 Conclusion 64 7 Prospective Aspects 65 8 Reference 66

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