電阻式記憶體(Resistive Random Access Memory, RRAM)同時具有讀寫速度快、結構簡單、單元面積小、密度高、低電壓驅動、低耗電、高操作週期及非揮發性等優點，因此近年來許多研究團隊競相投入研發。對於將UV光和RRAM的整合，可見光的高透射率和穩定可靠性的良好性能是持續的關鍵，而氧化鎳和氧化鋅具有寬能隙、高遷移率、高透明度、良好的電性及光學特質，在光學領域中有著廣闊的應用前景，如果未來將UV光結合到RRAM元件製程中，這種特殊應用可以用在許多光電子顯示產品中。
本研究利用射頻磁控濺鍍法(Radio Frequency Magnetron Sputtering Method)製備主動層氧化鎳及氧化鋅薄膜、上電極氧化銦錫薄膜(Indium Tin Oxide, ITO)，並量測兩種結構RRAM之電流電壓掃描曲線，在耐用度測試上穩定達到100次循環，高低阻態在0.1V時的電流比值達到兩個階數(order)以上，接著在記憶時間(retention time)可靠度方面的量測，經過10000秒的量測後仍然維持優異儲存特性。接著將紫外光照射RRAM元件上，探討在不同時間下紫外光照射對RRAM之影響，及藉由RRAM對光之響應，將高阻態在小定電壓下切換至低阻態，最後照射紫外光時，研究RRAM電阻切換與光功率變化。

In recent years many research groups have delved into the research and development of Resistive Random-Access Memory (RRAM) which has the combined advantages of fast read/write speed, simplicity in structure, small device size and density, low activation bias voltage, low power consumption, allowably many periodic operating cycles and nonvolatile memory feature. In order to operate RRAM in ultraviolet (UV) spectroscopic regime, the spectral transparency of electrodes and a reliable device performance are keys to ensure its continual applicability. Among the materials considered, nickel oxide (NiO) and zinc oxide (ZnO) potentially have a broad perspective in optical applications due to their relatively wide bandgap, high mobility, high transparency, remarkably good electrical and optical characteristics. It is foreseeable in the future that unique applicability of RRAM in UV will make its headway as a key component in many optoelectronic displaying products.
The present research focuses on using Radio Frequency Magnetron Sputtering method to prepare NiO and ZnO active layers and indium tin oxide (ITO) top electrode for the realization of RRAM devices and their current-voltage characteristics are subsequently evaluated. Specifically, a series of reliability tests show that the fabricated memories have endured up to 100 switching cycles and the current contrast ratio between high (HRS) and low (LRS) resistance state at 0.1V has achieved more than two orders of magnitude. Furthermore, the retention time measurement has also demonstrated that the memory storage capability of these RRAMs remain in excellent operating condition after surviving more than 10,000 seconds of the test.
Finally, the extent of UV irradiation impact on RRAM are then investigated. Major attentions are concentrated in finding out a correlation between the UV responsivity and switching characteristics for NiO and ZnO RRAMs under study at low bias voltage.

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