本論文是藉由量測應用應變記憶技術(Stress Memorization Technique, SMT)製作之金氧半場效電晶體在高溫下的各項直流參數，來探討應變矽元件與溫度的相依關係。當元件操作在高溫下，使用了應變記憶技術(SMT)的互補式場效電晶體中，各個特性參數的退化現象做分析，發現由於應變記憶技術引致之伸張應力有效地轉移至N型金氧半場效電晶體的通道內，使得N型金氧半場效電晶體能有較好的效能之外，在高溫下退化的情況也被抑制減緩。另外一方面，P型金氧半場效電晶體雖然在室溫的環境下並不會受到應變記憶技術的影響退化，但隨著溫度的上升元件的退化情況也益加嚴重。
此外，應變矽N型金氧半場效電晶體低頻雜訊(low-frequency noise, 1/f noise)與溫度的相依關係也同時被探討。首先隨著溫度增加，應變矽N型金氧半場效電晶體的低頻雜訊仍然是由載子數變動理論(carrier-number fluctuation)以及載子遷移率變動理論(mobility fluctuation)所同時主導的混合機制；而藉由從低頻雜訊及電荷幫浦量測(charge pumping measure)結果當中萃取出來的胡格常數(Hooge parameter)及界面能態(interface state)更可證實，伸張應力使得通道中電子遷移率提升並同時降低散射，進而使得應用應變記憶技術之N型金氧半場效電晶體在高溫底下，低頻雜訊的特性獲得的改善。

In this work, temperature dependence of electrical characteristics of strained CMOSFETs combined with stress memorization technique (SMT) process is investigated through the analysis of DC parameters measured at high temperature. For nMOSFETs, it can be found that the device performance is improved and less degradation at high temperature due to SMT process-induced uniaxial tensile on channel, indicating the intrinsic benefits of tensile stress for device operating at high temperature. On the other hand, for pMOSFETs, the degradation in DC characteristics is observed as temperature increased, implying the influence from SMT process becomes larger at high temperature.
In addition, the low-frequency (1/f) noise behavior at high temperature of nMOSFETs is also presented. First, regardless of temperature, the physical origin of 1/f noise behavior is dominated by a unified model, incorporating both the carrier-number fluctuation and correlated mobility fluctuation. Through the extracted Hooge parameter and interface state from 1/f noise and charge pumping measurements respectively, the improved 1/f noise can be attributed to the tensile stress induced lower carrier scattering and increased mobility at the same time.

Chapter 1
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Chapter 3
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Chapter 4
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