本研究利用離子束濺鍍系統，在sapphire c-plane基板上成長氧化鋅摻雜鋱薄膜，並固定5% Tb摻雜量。實驗分三個部分，室溫下改變氧壓成長、氧氣下退火處理及氫氣下退火處理，分別研究其結構、磁性、電性關係。我們觀察到所有樣品均有室溫鐵磁性。
在改變氧壓的樣品中，由XRD及PL量測，c軸的結構隨著氧壓升高變好，但繞射峰形貌不對稱，這是由於室溫下薄膜沉積時與基板之間產生的應力所造成的。樣品的導電性在無氧壓及低氧壓為n-type半導體。然而，隨著氧壓增高樣品呈絕緣態。磁性量測觀察到飽和磁化量隨著氧壓升高而減小。
在氧氣下退火處理，隨著退火溫度上升(650℃~850℃)，樣品結構與結晶性都大幅改善，但樣品都成絕緣態，且退火950℃時樣品會出現第二相，磁性量測上，飽和磁化量隨著退火溫度升高而下降。
氫氣下退火時，由XRD及PL分析樣品結構及導電性都隨著溫度升高變差。在氫氣下退火於300℃時有最大的飽和磁化量5.37emu/cm3，接著磁性又隨氫氣下退火溫度升高而下降。有趣的是，載子濃度隨著退火溫度上升而變高。

由三個實驗結構、磁性、電性分析總結，我們所製備Tb摻雜於ZnO薄膜的磁性來源，無法使用單純使用束縛極化子模型或是載子引致來解釋其磁性來源。解釋氧化鋅摻雜Tb的傳輸與磁性研究是需要一個新理論。

In this study, we grown 5% Tb doped ZnO thin films on c-plane sapphire by ion-beam sputtering system. The experiments were divided into three parts: A. Under different oxygen pressure B. annealing in O2 C. annealing in H2 . We observed all the Tb doped ZnO samples are room temperature ferromagnetic.
The samples of A-series were grown at room temperature with different oxygen pressure. The c-axis orientation structures of the thin films became better with increasing oxygen pressure revealed by XRD and PL analysis. The shape of XRD peaks is asymmetric owing to the stress between the substrate and the thin film. The electric conductivity of sample grown in low oxygen pressure is n-type semiconductor. However, the samples grown in high oxygen pressure were insulator. The saturation magnetization decreased with increasing oxygen pressure.
In B-series, with increasing annealing temperature (650℃~850℃) in O2, the structures and crystalline of the samples were significantly improved, but the electric conductivity were insulator. The samples with annealing at 950℃ lead to the formation of the secondary phase. In this part, the saturation magnetization decreased with annealing temperature in O2.
In C-series, we observed that structure and electric conductivity of samples decrease with increasing annealing temperature in H2. The samples with annealing at 300℃ have maximum saturation magnetization (Ms~5.37 emu/cm3), and that of samples decrease with increasing annealing temperature in H2. Interestingly, the carrier concentration increased with the increase of annealing temperature in H2.

According to three parts that the structures, magnetic properties and the electrical analysis. The results cannot be explained by Bound Magnetic Polaron (BMP) or carrier-induced ferromagnetism model.

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