本論文為對於氮化鎵材料摻雜錳之光電特性作為轉換層應用於太陽能電池當中。我們進行穿透光譜量測去探討轉換層所能吸收之入射光光子波段，由穿透頻譜之結果可以得知，氮化鎵材料摻雜錳將會在氮化鎵的禁止能帶中形成雜質能帶，而所形成之雜質能帶價電帶和導電帶之間能量之差距則可以吸收能量小於原本氮化鎵材料能隙大小之光子能量，如此一來此結構不僅可以吸收原本氮化鎵能隙大小之入射光光子能量，也可以吸收小於原本氮化鎵能隙大小之入射光光子能量，使價電帶之電子躍遷至雜質能帶與雜質能帶之電子躍遷至導電帶，經由此轉換過程，以期有額外光電流貢獻出。
而將此結構應用的元件為：主動層為GaN/InGaN多重量子井之具
Up-Convertion 機制之轉換層太陽能電池之結構，我們進行順向與逆
向偏壓的電流-電壓量測和照光下太陽能電池元件之電流密度-電壓
量測和外部量子效應之量測來探討是否有額外光電流之提升，進而提
升轉換效率。實驗結果和分析將於本論文中詳加描述。

In this study,we investigated in optical and electrical characteristic of
Mn-doped GaN as a conversion layer for application in solar cells.First,we investigated conversion layer by transmittance spectrums absorbing incident light.According to the results of transmittance spectrums,Mn-doped GaN would form an impurity band,while the formation of the impurity band and the valence band to the conduction band energy gap between the absorbed energy can be smaller than the original size of the bandgap of GaN photon energy,so that this kind of structure could not only absorb the original GaN the size of the bandgap energy of the incident photons, but also could absorb the energy gap is smaller than the size of the original GaN photon energy of incident light,so the electrons on valence band transit to the impurity band and the electrons on the impurity band transit to the conduction band.By this process of conversion,hoping that the formation of photocurrent would occur.
The application of this structure,active layer was GaN/InGaN multiple quantum wells with Up-convertion mechanisms conversion layer solar cell structure,we carried out the forward and reverse current - voltage measurements, under the simulation of solar the current density-voltage measurements and external quantum effects of the measurements to make sure that whether the extra photocurrent improving,further enhancing conversion efficiency.Results of experiments and analysis would discuss detailedly in my study.

第一章
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第二章
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第四章
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