光通訊技術憑藉其高頻寬、低損耗及抗電磁干擾等優勢，已確立其在現代高速與長距離資料傳輸中的關鍵地位，並被視為取代傳統電子架構的理想方案。在此趨勢下，光積體電路（PIC）因能有效提升系統整合度、降低功耗與成本而備受矚目。本研究旨在突破現有光憶阻器在材料與性能上的限制，提出一種新穎的非揮發性光記憶體元件，成功將電阻式記憶體（ReRAM）微縮堆疊至鈦擴散鈮酸鋰（Ti-diffused LiNbO3）多模干涉（MMI）耦合器上。此ReRAM採用Ag / Al2O3 / CsPbBr3 QDs / Al2O3 / ITO的三層結構，並結合電化學金屬化（ECM）與價態變化（VCM）雙重機制，透過鈣鈦礦量子點（CsPbBr3 QDs）切換層優異的離子遷移特性，協同銀離子（Ag+）、溴空缺（"V" _"Br" ^" +" ）及氧空缺（"V" _"O" ^" 2+" ）共同遷移形成穩定的導電路徑，從而實現低功耗且高穩定性的電阻切換行為。雙層Al2O3結構同時兼具保護與離子擴散阻障功能，賦予元件可控的漸進式切換能力。當透過電控寫入或擦除ReRAM的電阻狀態時，導電燈絲的生成與斷裂將引起局部折射率變化，可對MMI波導中的相位進行非揮發性調變，進而同步調控輸出光功率、分光比與穿透頻譜，實現了多維度的光學讀取功能。此研究成果不僅展現了光電整合元件在記憶與調變功能上的應用潛力，亦為新世代高整合度、低功耗之光子類神經計算平台提供創新設計觀點與實驗基礎。

Optical communication, with advantages of high bandwidth, low propagation loss, and strong immunity to electromagnetic interference (EMI), has become a critical technology for modern high-speed and long-distance data transmission. Researchers and engineers widely regard it as a promising alternative to traditional electronic architectures. Thus, in this context, photonic integrated circuits (PICs) are gaining significant attention for enhancing system integration while reducing power consumption and cost. This research presents a novel non-volatile optical memory, innovatively integrating a miniaturized resistive random access memory (ReRAM) onto a Ti-diffused lithium niobate (LiNbO3) multi-mode interference (MMI) coupler. The ReRAM features an Ag / Al2O3 / CsPbBr3 QDs / Al2O3 / ITO trilayer structure, combining electrochemical metallization (ECM) and valence change mechanism (VCM). The CsPbBr3 perovskite quantum dots switching layer exhibits excellent ion mobility, enabling stable, low-power resistive switching via the synergistic migration of silver ions (Ag+), bromine vacancies ("V" _"Br" ^" +" ), and oxygen vacancies ("V" _"O" ^" 2+" ) to form conductive paths. Dual Al2O3 layers are protective and ion-diffusion barriers, ensuring controllable, gradual switching. Electrically controlling the ReRAM state induces localized refractive index changes, allowing for non-volatile phase modulation of the MMI waveguide. This integrated device enables multi-dimensional optical readout by simultaneously controlling output power, splitting ratio, and transmission spectra. This work demonstrates the practical application potential of this optoelectronic integrated device in memory and modulation. It provides a pioneering design perspective and experimental foundation for future high-performance, reconfigurable, and low-power photonic neuromorphic computing platforms.

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第五章
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第六章
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