本論文運用製程所製做出之X-ducer微壓電阻應力計(Mirco-Piezoresistive Stress Sensor)的特性而以非破壞實驗來準確量測電子封裝內部應力，且利用X-ducer量測方便，再加上其製程與結構簡單等各方面優點，以提供電子封裝上的研究人員在設計上重要參考數據。
　　而在本文中將實驗分成外加負載與溫度兩方面，藉由外加負載或溫度對感測器產生的擠壓拉扯，進而因壓電效應產生電壓，再利用兩個量測結果來做比較，便產生應力與溫度的關係，日後便可利用此關係來了解各種電子產品因溫度的關係所產生破壞。
　　本實驗所製作之感測器黏貼於轉接板(PCB)上，並與轉接板作信號連結，嘗試著以感測器當做構裝上的晶片，而轉接板當做基板，來進行量測，以求出晶片與基板間所產生之應力關係，而此感測器也可應用於各種封裝上。
　　最後就本感測器未來發展，提出感測器的便利性與其可能的強大發展力，提供日後研究依據。

none

參考文獻
[1] S.K. Clark Samuel and K.D. Wise Kensall, Pressure sensitivity in anisotropically etched thin-diaphragm pressure sensors, IEEE Trans. on Electron Devices, Vol.ED-26, no.12, pp.1887-1896, 1979.

[2] S.C. Kim and K.D. Wise Kensall, Temperature sensitivity in silicon piezoresistive pressure transducers, IEEE Trans. on Electron Devices, Vol.ED-30, no.7, pp.802-810, 1983.

[3] J. E. Gragg, W. E. McCulley, W. B. Newton and C. E. Derrington, Compensation and calibration of a monolithic four terminal silicon pressure transducer, Technical Digest, IEEE Solid-State Sensor Workshop, Hilton Head Island, SC, pp.21-27, June 1984.

[4] O. K. Tabata, S. Sugiyama and I. Igarashi, Mechanical Property Measurements of Thin Films Using Load-Deflection of Composite Rectangular Membranes, Sensor and Actuators, pp.135-141, 1989.

[5] J. A. Walker, K. J. Gabriel and M. Mehregany, Mechanical Integrity of Polysilicon Films Exposed to Hydrofluoric Acid Solutions, Journal of Electronic Materials, pp.665-670, 1991.

[6] J. Koskinen, E. Steinwall, R. Soave and H. H. Johnson, Microtensile Testing of Free-Standing Polysilicon Fibers of Various Grain Sizes, Journal of Micromechanics and Microengineering, pp.13-17, 1993.

[7] W. Gopel, J. Hesse and J. N. Zemel, H. H. Bau, N. F. deRooij and B. Kloek, Sensors a Comprehensive Survey, Mechanical Sensors, VCH, Weinheim and New York, Vol.7, pp.146-172, 1994.

[8] M. Biebl and H. V. Philipsborn, Fracture Strength of Doped and Undoped Polysilicon, Transducers '95-Eurosensors IX, Proceedings of the International Conference on Solid-state Sensors and Actuators, and Eurosensors IX, Stockholm, Sweden, pp.72-75, 1995.

[9] M. Biebl, T. Scheiter, C. Hierold, H. V. Philipsborn, H. Klose, Micromechanics Compatible with an 0.8mm CMOS Process, Sensors and Actuators, pp.593-597, 1995.

[10] H. Kahn, S. Stemmer, K. Nandakumar, A. H. Heuer, R. L. Muullen, R. Ballarini and M. A. Huff, Mechanical Properties of Thick, Surface Micromachined Polysilicon Films, The Ninth Annual International Workshop on Micro Electro Mechanical System, San Diego, California, USA, pp343-353, 1996.

[11] W. N. Sharpe, R. Vaidyanathan, R. L. Edwards, Measurements of Young's Modulus Poissons ratio and tensile Strength of Polysilicon, Proceedings of IEEE Micro Electro Mechanical System-97, Nagoya, Japan, pp.424-429, 1997.

[12] S. M. Sze, Semiconductor Sensors, Wiley & Sons, INC., New York, pp. 160-200, 1994.

[13] S. K. Clark and K. D. Whise, Pressure sensitivity in anisotropically etched thin diaphragm pressure sensors, IEEE Trans. Electron Devices, Vo1.Ed-26, No 12, pp.1887-1896, 1979.

[14] J. E. Gragg, W. E. McCulley, W. B. Newton and C. E. Derrington, Compensation and Calibration of a Monolithic four Terminals Silicon Pressure Transducers, Tech Digest IEEE Solid-state sensor Workshop, Hilton Head Island, SC, USA, pp.21-27, 1984.

[15] 陳景欣，"單晶矽微型壓力感測器之設計"，國立成功大學機械工程研究所碩士論文(1998)。

[16] O. Tabata, R. Asahi, H. Funabashi, K. Shimaoka , S. Sugiyama, Anisotropic Etching of Silicon in TMAH Solutions, Sensors and Actuators, pp.51-57, 1992.

[17] H. Seidel, The Mechanism of Anisotropic Silicon Etching and its relevance for Micromachining, Digest of Tech. Papers, Transducers’ 87, 4th Intl. Conf. Solid-state Sensors and Actuators, pp. 120-125, 1987.

[18] H. Seidel, L. Csepregi, A. Heuberger and H. Baumgartel, Anisotropic Etching of Crystalline Silicon in Alkaline Solutions, J. Electrochem. Soc., vo1. 137, no.11, 1990.

[19] S. C. Kim, K. D. Wise, Temperature sensitivity in silicon piezoresistive pressure transducers, IEEE Trans. Electron Devices, vol.Ed-30, July, pp.802-810, 1983.