鑽石成核於經化學溶液前處理之矽與二氧化矽基板，藉由微波電漿化學氣相沉積系統，在未外加任何偏壓下及未有任何經奈米鑽石顆粒的前處理，可得到成核密度大於一千倍對照於未經過化學前處理之基板。
基板經由硫酸鹽類及磷酸鹽類水溶液前處理，像是過硫酸銨、硫酸銅和磷酸銨。兩種前處裡方法，分別使用超音波震洗法與加熱致乾過硫酸銨法於微波電漿化學氣象沉積系統中使用Ar-rich/H2/CH4氣體混和參數在工作壓力90-200Torr與基板溫度700-900°C，也可成功實行於Ar-rich/N2/CH4、 CO2/CH4以及H2-rich/CH4等微波電漿化學氣相沉積參數下。
電子顯微鏡下顯示了經由加熱致乾過硫酸銨前處理可達到鑽石成核密度高達~10^9-10^10cm-2，然而卻會因咖啡環漬效應(coffee ring effect)影響於前處理後殘留在基板表面導致後續鑽石成核密度呈現環狀分布或疏密相間等不均勻現象發生。
532nm綠光源的拉曼散射顯示鑽石薄膜之鑽石特徵峰在1334cm-1左右，伴隨著鑽石缺陷與非鑽石相之D-band跟G-band以及在鑽石薄膜晶界中trans-poly-acetylene導致~1140 cm-1與~1480 cm-1峰值。
化學處理導致鑽石成核密度提升之機制目前仍未明朗，可能因素為基板表面因化學蝕刻導致粗糙度增加、化學藥品附著殘留或是形成鍵結於基板表面抑或是化學溶液中雜質如碳或金屬類所導致。化學處理鑽石成核法擁有簡單實行與價格便宜的優點，且不需額外的使用奈米鑽石顆粒等前處理與外加偏壓於微波電漿化學氣象沉積系統中即可達到高鑽石成核密度。

Diamond nucleation by microwave plasma chemical vapor deposition on chemically treated silicon and silicon dioxide substrates without pre-seeding by diamond nano-particles increases in density by more than three orders of magnitude from that without chemical treatments. Substrates treated by water solutions of sulfate and phosphate compounds, such as ammonium persulfate, copper sulfate, and ammonium phosphate, are subjected to microwave plasma chemical vapor deposition in Ar-rich/H2/CH4 gas mixtures at 90-200Torr gas pressure and 700-900°C substrate temperature. Scanning electron microscopy demonstrates that diamond nuclei are formed on ammonium persulfate treated silicon and silicon dioxide at densities of ~10^9-10^10cm-2. 532nm Raman scattering of the nanocrystalline and microcrystalline diamond diamond films exhibits the diamond peak around 1334cm-1, and the characteristic Raman peaks attributable to atomic hydrogen in trans-poly-acetylene within grain boundaries. This new method of diamond nucleation avoids the needs for pre-seeding of diamond nanoparticles or diamond debris and externally applied bias voltage.

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